Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band

Kawasaki, Tsuyoshi; Sugawara, Kazuo; Dobroiu, Adrian; Eto, Takanori; Kurita, Yoshihisa; Kojima, Kazuki; Yabe, Yuhei; Sugiyama, Hiroki; Watanabe, Takayuki; Suemitsu, Tetsuya; Ryzhii, V.; Iwatsuki, K.; Fukada, Youichi; Kani, Jun‐ichi; Tanida, Jun; Yoshimoto, Naoto; Kawahara, Kenji; Ago, Hiroki; Otsuji, T.

doi:10.1016/j.sse.2014.07.009

Cited by 23 publications

(9 citation statements)

References 24 publications

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“…Unforturnately, the absorption rate of a single layer graphene to light is only ≈2.3%, and therefore other materials with strong optical absorption usually are incorporated into graphene to harvest more photons . These graphene photodetectors include metal graphene contact photodetectors, plasmonics resonators to graphene, photodetector based on vertical p‐n graphene junctions, photodetectors based on graphene field‐effect transistors, photodetectors coupling with microcavities, and photodetector based on hybrid graphene–QD . These works indicate great significance for the application of graphene in optical detecting field.…”

Section: Introductionmentioning

confidence: 99%

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Pan

Wang

et al. 2018

Part & Part Syst Charact

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incorporated into graphene to harvest more photons. [4][5][6][7][8][9][10][11][12][13][14] These graphene photodetectors include metal graphene contact photodetectors, [4] plasmonics resonators to graphene, [5,6] photodetector based on vertical p-n graphene junctions, [7] photodetectors based on graphene field-effect transistors, [8][9][10] photodetectors coupling with microcavities, [11] and photodetector based on hybrid graphene-QD. [12][13][14] These works indicate great significance for the application of graphene in optical detecting field. Among them, the device combining quantum dots and graphene has achieved the highest response rate and quantum efficiency. [15] Perovskites quantum dots (PQDs), [16] whose three dimensions are all in the nanoscale, combined unique optical and electrical properties and solution-processed advantages. The band gaps could be easily tuned by adjusting the dot size and components. [17] The photodetectors based on PQDs have already outperformed conventional photodetectors in many aspects, including low-cost room-temperature device fabrication via solution processing, flexible substrate compatibility, high responsivity, and broadband spectral sensitivity. Recently, solution-processed organic-inorganic perovskite (ABX 3 , where A = CH NH 3 3 + (MA) or NH 2 CHCH + (FA), B = Pb 2+ or Sn 2+ and X = Cl − , Br − , and I − ) are emerging as promising semiconductors, illustrating a fast increase of light-to-electricity conversion efficiency through judicious optimizations to over 20%. [18][19][20] Recently, Liu et al. fabricated superior performance photodetector based on large-area single-crystalline MAPbX 3 perovskite wafer. [21,22] Compared with MAPbX 3 materials, FAPbX 3 was found to be an even better optoelectronic material with longer carrier time and diffusion lengths. [23,24] In this paper, we report a photodetector with high responsivity and external quantum efficiency (EQE) by combining single-layer graphene with FAPbBr 3 QDs. In this device, graphene provides conductive channels with high carrier mobility, while PQDs act as a strong light absorber. We present a hybrid FAPbBr 3 QD-graphene photodetector that exhibits a high photoresponsivity of ≈1.15 × 10 5 AW −1 , and a high EQE of ≈3.42 × 10 7 %. The high responsivity and EQE not only originate from the high photoelectric conversion efficiency of Highly performance photodetector requires a wide range of responses of the incident photons and converts them to electrical signals efficiently. Here, a photodetector based on formamidinium lead halide perovskite quantum dots (e.g., FAPbBr 3 QDs)-graphene hybrid, aiming to take the both advantages of the two constituents. The FAPbBr 3 QD-graphene layer not only benefits from the high mobility and wide spectral absorption of the graphene material but also from the long charge carrier lifetime and low dark carrier concentration of the FAPbBr 3 QDs. The photodetector based on FAPbBr 3 QD-graphene hybrid exhibits a broad spectral photoresponse ranging from 405 to 980 nm. A photoresponsiv...

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Section: Introductionmentioning

confidence: 99%

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Pan

Wang

et al. 2018

Part & Part Syst Charact

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“…Finally, the design of asymmetrical E-plane inserts or even order filters, where the graphene stripe length of the central insert differs from the adjacent stripes belonging to the two inner resonators, is possible using the proposed method. It is necessary in such a case to compare a larger number of combinations of geometrical parameters and modify (12)…”

Section: Design Procedures For Carbon Based Filtersmentioning

confidence: 99%

“…Schottky diodes, used in mixers, multipliers, phase shifters, and detectors, have to be designed using approaches aimed at reducing the capacitances, in efforts to extend the frequencies of operation up to 1.5 THz [11]. Likewise, graphene-channel field-effect transistors are being developed, which can, with a careful design, help increase the cutoff frequencies to the terahertz range [12]. As the future broadband low-terahertz communications envision combined use of the optical and wireless technology [17], [18], it is of interest to develop mutually compatible devices and systems.…”

Section: Introductionmentioning

confidence: 99%

“…Correspondence between the change in the electrical length at ports of an impedance inverter, , and the guided wavelength, , is obtained based on the half-wave prototype method. It is given by(12) for the innermost resonator in ) ( λ λ 0 g g f…”

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confidence: 99%

“…left hand side of(12) has been determined as a function of frequency f, for various points on the loci of points ) these curves have been depicted in Fig.6(a), which can be used to estimate and 109 range. Namely, the solution of (12), for a given , corresponds to the crossing point of a given line ) line.…”

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confidence: 99%

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Design methodology for graphene tunable filters at the sub-millimeter-wave frequencies

Ilić

Bukvic

Budimir

et al. 2019

Solid-State Electronics

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Tunable components and circuits, allowing for the fast switching between the states of operation, are among the basic building blocks for future communications and other emerging applications. Based on the previous thorough study of graphene based resonators, the design methodology for graphene tunable filters has been devised, outlined, as well as explained through an example of the fifth order filter. The desired filtering responses can be achieved with the material loss not higher than the loss corresponding to the previously studied single resonators, depending mostly on the quantity of graphene per resonator. The proposed design method relies on the detailed design space mapping; obtained data gives an immediate assessment of the feasibility of specifications with a particular filter order, maximal passband ripple level, desired bandwidth, and acceptable losses. The design process could be further automated by the knowledge based approach using the collected design space data.

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Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor

Qin

Sun

Liang

et al. 2017

Carbon

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Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band

Cited by 23 publications

References 24 publications

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Design methodology for graphene tunable filters at the sub-millimeter-wave frequencies

Room-temperature, low-impedance and high-sensitivity terahertz direct detector based on bilayer graphene field-effect transistor

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