2016
DOI: 10.1016/j.jallcom.2016.01.045
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Graphene doped TiO2/p-silicon heterojunction photodiode

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Cited by 51 publications
(17 citation statements)
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“…Materials such as titania [180,181] and zinc oxide [182] are successfully used for the construction of p-silicon heterojunction photodiodes. Al-Hazami and Yakuphanoglu [162] used a binary combination of these materials to build a p-type diode.…”
Section: Methods Of Synthesis Of Titania-based Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…Materials such as titania [180,181] and zinc oxide [182] are successfully used for the construction of p-silicon heterojunction photodiodes. Al-Hazami and Yakuphanoglu [162] used a binary combination of these materials to build a p-type diode.…”
Section: Methods Of Synthesis Of Titania-based Materialsmentioning
confidence: 99%
“…The use of polymer matrices such as the commercial Pluronic P123 or F127 (poly(ethylene glycol)-block-poly(propylene glycol)-block-poly(ethylene glycol)—PEG-PPG-PEG) is becoming more and more popular in the synthesis of titania-based materials [169,170,171,172,173,174,175,176,177,178,179,180,181,182,183,184,185,186,187,188,189,190,191,192,193,194,195,196,197,198]. Fan et al [29] developed a method of synthesizing a TiO 2 -ZrO 2 oxide system using Pluronic123 (P123) and Macrogol20000 (PEG) matrices.…”
Section: Methods Of Synthesis Of Titania-based Materialsmentioning
confidence: 99%
“…[2,7] Titanium dioxide (TiO 2 ) that is a member of the metal oxides family mentioned earlier has attracted intensive attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, simple preparation, wide optical bandgap, high stability, and photoactive properties. [8,9] TiO 2 is extensively used and studied in many applications, such as gas detection, photocatalysis, UV detectors, and perovskite-based solar cells (as an electron transport layer). [8,10] However, the transient localization of electrons in the sub-bandgap restricts the electrical conduction of TiO 2 .…”
mentioning
confidence: 99%
“…The change in R s is indicative of interface charges following the frequency of the applied electric field. The peak intensity is related to the number of interface states under various frequencies [61][62][63][64].…”
Section: Capacitance/conductance-voltage (C/g-v) Measurementsmentioning
confidence: 99%