The
H
2
-induced etching of low-dimensional materials is of significant
interest for controlled architecture design of crystalline materials
at the micro- and nanoscale. This principle is applied to the thinnest
crystalline etchant, graphene. In this study, by using a high H
2
concentration, the etched hexagonal holes of copper quantum
dots (Cu QDs) were formed and embedded into the large-scale graphene
region by low-pressure chemical vapor deposition on a liquid Cu/W
surface. With this procedure, the hexagon flower-etched Cu patterns
were formed in a H
2
environment at a higher melting temperature
of Cu foil (1090 °C). The etching into the large-scale graphene
was confirmed by optical microscopy, atomic force microscopy, scanning
electron microscopy, and Raman analysis. This first observation could
be an intriguing case for the fundamental study of low-dimensional
material etching during chemical vapor deposition growth; moreover,
it may supply a simple approach for the controlled etching/growth.
In addition, it could be significant in the fabrication of controllable
etched structures based on Cu QD patterns for nanoelectronic devices
as well as in-plane heterostructures on other low-dimensional materials
in the near future.