Graphene-ferroelectric hybrid devices for multi-valued memory system

Jandhyala, Srikar; Mordi, Greg; Mao, Dacheng; Ha, Min−Woo; Quevedo‐Lopez, Manuel; Gnade, Bruce E.; Kim, J.

doi:10.1063/1.4813264

Cited by 20 publications

(16 citation statements)

References 29 publications

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“…While it turns to be extremely challenging to shrink device footprint, storing multi‐bits in a single cell is another strategy to increase data density. Jandhyala et al demonstrated a multilevel nonvolatile ferroelectric memory using graphene as the sensing element . By scanning ferroelectric polymer with AFM tip biased by opposite polarities, the doping types of graphene was complementarily controlled in their setup.…”

Section: State‐of‐the‐art Graphene Based‐memory Cellsmentioning

confidence: 99%

Graphene Based Non‐Volatile Memory Devices

2014

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With the continuous advance of modern electronics, the demand for non-volatile memory cells rapidly grows. As a promising material for post-silicon electronic applications, graphene non-volatile memory cells have received renewed interest due to its outstanding electronic and other physical properties. This research news briefly summarizes the recent progress in this area. Appealing research activities and technical trends are highlighted. Afterwards, requirements and aims of future graphene non-volatile memory cells that may possibly influence their commercialization are also discussed.

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Section: State‐of‐the‐art Graphene Based‐memory Cellsmentioning

confidence: 99%

Graphene Based Non‐Volatile Memory Devices

2014

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“…Another example of composite material with G and GO can be found in work [8]. The material obtained therein has been prepared for hybrid devices for multi-valued memory system.…”

Section: Introductionmentioning

confidence: 99%

Obtaining and main dielectric properties of Ba0.6Pb0.4TiO3/graphene oxide composite

Skulski

Bochenek

Brzezińska

et al. 2021

J Mater Sci: Mater Electron

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The paper describes the technology of obtaining and the results of the investigations of microstructure, XRD, SEM, main dielectric properties, electrical conductivity measurements and P-E hysteresis loops of Ba0.6Pb0.4TiO3/graphene oxide composite (abbr. BPT/GO). In the final step of the technology, the samples have been sintered using the Spark Plasma Sintering (SPS) method. Diffraction patterns of the BPT/GO composite exhibit lines which can be related to perovskite structure. They also reveal additional lines that can be derived from the initial component oxides. Investigations of electrical conductivity suggest that the positive temperature coefficient of resistivity (PTCR) effect occurs at temperatures up to approximately 120 °C. Dielectric hysteresis loops below 90 °C are wide and typical for materials with rather high electrical conductivity. The hysteresis loop obtained at 120 °C is more typical for ferroelectrics. The obtained material is interesting, nevertheless it is probably possible to find better conditions of obtaining and/or a better composition thereof.

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“…Another example of composite material with G and GO we can nd in work [8]. Material obtained in [8] has been prepared for hybrid devices for multi-valued memory system. There are also many another examples of composite materials.…”

Section: Introductionmentioning

confidence: 99%

Obtaining and Main Dielectric Properties of Ba0.6Pb0.4TiO3/graphene Oxide Composite

Skulski¹,

Bochenek

Brzezińska

et al. 2020

Preprint

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In this paper there is described the technology of obtaining and results of investigations of microstructure, XRD, SEM, main dielectric properties, electrical conductivity measurements and P-E hysteresis loops of Ba0.6Pb0.4TiO3/graphene oxide composite (abbr. BPT/GO). In the final step of technology, the samples have been sintered using the Spark Plasma Sintering (SPS) method. Diffraction patterns of BPT/GO composite exhibit lines which can be related with perovskite structure, as well as reveal additional lines that can be derived from the initial component oxides. Investigations of electrical conductivity suggest that the PTCR effect occurs at temperatures up to about 120°C. Dielectric hysteresis loops below 90°C are wide and typical for materials with rather high electrical conductivity. The hysteresis loop obtained at 120°C is more typical for ferroelectrics. The obtained material is interesting, however it is probably possible to find better conditions of obtaining it and/or a better composition.

show abstract

Graphene-ferroelectric hybrid devices for multi-valued memory system

Cited by 20 publications

References 29 publications

Graphene Based Non‐Volatile Memory Devices

Graphene Based Non‐Volatile Memory Devices

Obtaining and main dielectric properties of Ba0.6Pb0.4TiO3/graphene oxide composite

Obtaining and Main Dielectric Properties of Ba0.6Pb0.4TiO3/graphene Oxide Composite

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