Graphene field-effect transistor for radio-frequency applications : review

Abstract

Currently, graphene is a topic of very active research in fields from science to potential applications. For various radio-frequency (RF) circuit applications including low-noise amplifiers, the unique ambipolar nature of graphene field-effect transistors can be utilized for highperformance frequency multipliers, mixers and high-speed radiometers. Potential integration of graphene on Silicon substrates with complementary metal-oxide-semiconductor compatibility would also benefit future RF systems. The future success of the RF circuit applications depends on vertical and lateral scaling of graphene metal-oxide-semiconductor field-effect transistors to minimize parasitics and improve gate modulation efficiency in the channel. In this paper, we highlight recent progress in graphene materials, devices, and circuits for RF applications. For passive RF applications, we show its transparent electromagnetic shielding in Ku-band and transparent antenna, where its success depends on quality of materials. We also attempt to discuss future applications and challenges of graphene.

Assessing the Figures of Merit of Graphene-Based Radio Frequency Electronics: A Review of GFET in RF Technology

“…The outstanding carrier mobility together with its other unique properties make graphene an excellent material for transistors. Many excellent reviews have summarized the progress of graphene field-effect transistors (GFETs), including material synthesis, material characterization, device fabrication, and characterization, as well as various GFETbased applications [5][6][7][8][9]. One of the best properties of a GFET is its ambipolar characteristics, and it is best used in RF components [10][11][12][13].…”

Functionalized Graphene as an Ultrathin Seed Layer for the Atomic Layer Deposition of Conformal High-k Dielectrics on Graphene

“…Graphene has emerged as a promising active layer that enables high speed transistors due to its outstanding intrinsic mobility, high saturation velocity, and two-dimensional (2D) planar structure. , Based on these superb characteristics, graphene radio frequency (RF) transistors have been investigated extensively in an effort to improve their electrical performance in terms of field effect mobility, transconductance, current saturation, and cut-off frequency. − To achieve high-performance graphene devices, the integration of gate dielectrics into graphene channels has been considered as a significant process because the formation of ultrathin, high quality dielectrics on graphene is a prerequisite for reduced extrinsic scattering at the graphene-dielectric interface, low operating voltage, scaling capability, and device reliability. Atomic layer deposition (ALD) is an ideal technique for depositing ultrathin dielectric films because it enables precise thickness control and excellent uniformity .…”

Seeding atomic layer deposition of high-k dielectric on graphene with ultrathin poly(4-vinylphenol) layer for enhanced device performance and reliability

“…The low carrier mobility for the control device with the Al 2 O 3 dielectric can be attributed to the defects in graphene generated by the ALD process or to the charged impurities at the graphene/dielectric interface. [14][15][16] In contrast, the maximum measured carrier mobility among the devices with the PVPseeded graphene FET is 3600 cm 2 /vs which is an exceptional value for top-gate FET based on CVD graphene. It should be noted that our mobility is extracted using two-terminal transconductance, G m instead of I DS /(V GS -V Dirac ).…”