Graphene field-effect transistors: the road to bioelectronics

Donnelly, Matthew; Mao, Dacheng; Park, Junsu; Xu, Guangyu

doi:10.1088/1361-6463/aadcca

Cited by 30 publications

(31 citation statements)

References 101 publications

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“…This 2D carbon nanomaterial has achieved considerable interest due to the huge mobility of electrons and holes, optical transparency, flexibility, and chemical inertness [ 1 , 2 , 3 ]. Graphene is already considered to be a new transparent conductor [ 4 , 5 ], a monolayer alternative to the Schottky contact metals [ 6 , 7 ], and even an active layer of semiconductor devices [ 8 , 9 , 10 , 11 , 12 ]. Graphene-based transistors [ 8 ], diodes [ 6 , 7 ], photodetectors [ 9 , 10 , 11 ], and solar cells [ 12 , 13 , 14 ] are also meaningful in this context.…”

Section: Introductionmentioning

confidence: 99%

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

et al. 2020

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In this study, graphene was synthesized on the Si(100) substrates via the use of direct microwave plasma-enhanced chemical vapor deposition (PECVD). Protective enclosures were applied to prevent excessive plasma etching of the growing graphene. The properties of synthesized graphene were investigated using Raman scattering spectroscopy and atomic force microscopy. Synthesis time, methane and hydrogen gas flow ratio, temperature, and plasma power effects were considered. The synthesized graphene exhibited n-type self-doping due to the charge transfer from Si(100). The presence of compressive stress was revealed in the synthesized graphene. It was presumed that induction of thermal stress took place during the synthesis process due to the large lattice mismatch between the growing graphene and the substrate. Importantly, it was demonstrated that continuous horizontal graphene layers can be directly grown on the Si(100) substrates if appropriate configuration of the protective enclosure is used in the microwave PECVD process.

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Section: Introductionmentioning

confidence: 99%

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

et al. 2020

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“…Among them, electrochemical sensors [ 7 ] and field-effect transistors (FETs) are the most common. Graphene FETs (GFETs) make use of graphene sensitivity to electric fields and charges [ 4 , 8 ] to produce the output signal of the sensor, operating at low voltages [ 8 ]. Additionally, GFETs are compatible with the upscaling of the sensor fabrication process [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

“…Graphene FETs (GFETs) make use of graphene sensitivity to electric fields and charges [ 4 , 8 ] to produce the output signal of the sensor, operating at low voltages [ 8 ]. Additionally, GFETs are compatible with the upscaling of the sensor fabrication process [ 8 ]. GFETs can be found as top-gated, back-gated, or in a combined geometry, for the detection of a variety of molecules/biomolecules and ions [ 3 ], including pH [ 9 ], glucose [ 3 ], deoxyribonucleic acid (DNA) [ 3 ], proteins [ 5 ], and hormones [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

et al. 2020

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This work is on developing clean-room processes for the fabrication of electrolyte-gate graphene field-effect transistors at the wafer scale for biosensing applications. Our fabrication process overcomes two main issues: removing surface residues after graphene patterning and the dielectric passivation of metallic contacts. A graphene residue-free transfer process is achieved by using a pre-transfer, sacrificial metallic mask that protects the entire wafer except the areas around the channel, source, and drain, onto which the graphene film is transferred and later patterned. After the dissolution of the mask, clean gate electrodes are obtained. The multilayer SiO2/SiNx dielectric passivation takes advantage of the excellent adhesion of SiO2 to graphene and the substrate materials and the superior impermeability of SiNx. It hinders native nucleation centers and breaks the propagation of defects through the layers, protecting from prolonged exposition to all common solvents found in biochemistry work, contrary to commonly used polymeric passivation. Since wet etch does not allow the required level of control over the lithographic process, a reactive ion etching process using a sacrificial metallic stopping layer is developed and used for patterning the passivation layer. The process achieves devices with high reproducibility at the wafer scale.

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“…Graphene's biocompatibility, large electrochemical potential window and its ability to be functionalized along with other versatile properties make it suitable for biosensing applications [25]. Studies on the interaction of biomolecules with graphene paved the way for the development of graphene field-effect transistor (GFET) based biosensors [26]. In GFET, graphene acts as the channel layer.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear optical absorption and asymmetric charge carrier conduction in chemical vapor deposited single-layer graphene

Thomas

Nalini

Jayaraj

et al. 2020

Mater. Res. Express

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In this work, we report the nonlinear optical absorption and asymmetric charge carrier conduction in single layer graphene films deposited by chemical vapor deposition (CVD) technique on copper foils with pretreated surface. XRD texture and pole figure analysis of the substrate are utilized for the visualization of the effect of the pretreatment on the substrate. The synthesised graphene is employed as a channel layer in a back gated field-effect transistor and the asymmetric behavior of charge carriers is analyzed. Nonlinear optical response of graphene is recorded after transferring it onto a quartz substrate. Open aperture Z-scan technique yields a nonlinear absorption coefficient of 5.34×10 6 cm GW −1 . The film exhibits saturable absorption in the visible range with a saturation intensity as low as 0.134 GW cm −2 .

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Graphene field-effect transistors: the road to bioelectronics

Cited by 30 publications

References 101 publications

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Catalyst-Less and Transfer-Less Synthesis of Graphene on Si(100) Using Direct Microwave Plasma Enhanced Chemical Vapor Deposition and Protective Enclosures

Clean-Room Lithographical Processes for the Fabrication of Graphene Biosensors

Nonlinear optical absorption and asymmetric charge carrier conduction in chemical vapor deposited single-layer graphene

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