Graphene Film Growth on Cu Foil via Direct Carbon Atoms Deposition by Using SSMBE

Abstract

Graphene film has been successfully grown on Cu foil by directly depositing carbon atoms with a solid source molecular beam epitaxy (SSMBE) system. The structural and electronic properties of the graphene sample are characterized by Raman spectroscopy, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS). Results indicate that the graphene has the tubostratic stacking structure.