Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition

Abstract

The electrical properties of graphene on dielectric substrates, such as silicon carbide (SiC), have received much attention due to their interesting applications. This work presents a method to grow graphene on a 6H-SiC substrate at a pressure of 35 Torr by using the hot filament chemical vapor deposition (HFCVD) technique. The graphene deposition was conducted in an atmosphere of methane and hydrogen at a temperature of 950 °C. The graphene films were analyzed using Raman spectroscopy, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray, and X-ray photoelectron spectroscopy. Raman mapping and AFM measurements indicated that few-layer and multilayer graphene were deposited from the external carbon source depending on the growth parameter conditions. The compositional analysis confirmed the presence of graphene deposition on SiC substrates and the absence of any metal involved in the growth process.

Deposition of carbon nanolayers by PECVD on ceramic substrates

“…Simulation results show effective graphene deposition only at substrate temperature over 2000°C in the CVD and annealing process [4]. Experimental data for minimal low temperature for deposition of graphene structures on silicon carbide [5,6,7] in CVD method, gas annealing process, and hot filament methods in the range of 950-1000°C.…”

Molecular dynamics simulation of the amorphous graphite-like membrane deposited on ideal graphite substrate

“…Methane is used as a highquality carbon source for the deposition and production of carbon materials such as PyG, graphene, and fullerene, the nal product of methane pyrolysis is C and H 2 (ref. [42][43][44][45][46][47][48][49]. In the simulation box, the starting carbon source in the simulated system can be considered as the cracked carbon from CH 4 carbon source, and the carbon source ux rate was characterized by the carbon atom ux rate (CDR) deposited on the substrate, which was set to 10 ps −1 .…”