Graphene formation mechanisms on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>0001</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>

Bolen, Michael; Harrison, S. E.; Biedermann, Laura; Capano, Michael A.

doi:10.1103/physrevb.80.115433

Cited by 124 publications

(79 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Note that the phase signal of a tapping mode AFM can well distinguish SiC and graphene. 20,21 We have seen a strong contrast in the phase image for this area, which confirms that the depressions are covered by graphene. Similar phase image will be shown later.…”

Section: Resultssupporting

confidence: 59%

Growth of large domain epitaxial graphene on the C-face of SiC

Zhang

Dong

Kong

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC. a) Electronic mail: xswu@pku.edu.cn 2

show abstract

Section: Resultssupporting

confidence: 59%

Growth of large domain epitaxial graphene on the C-face of SiC

Zhang

Dong

Kong

et al. 2012

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The growth process for 6H-SiC is the same as the 4H-SiC as explained above. Most outstandingly, significant step bunching occurs; the initial steps flow over the surface while graphene is forming, bunch together, and form higher steps with larger terraces in between [22,[78][79][80]. However, on 3C-SiC all terraces have the same decomposition energy ( Figure 14c) and no energetically driven step bunching should be expected.…”

Section: Graphitization Process Of Sic Polytypesmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

View full text Add to dashboard Cite

This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

show abstract

“…• C многими исследователями и впервые опубликовано в [9]. Рельефная поверхность в свою очередь влияет на форми-рование картины электронной дифракции: стержнеобраз-ные рефлексы приобретают вид коротких прерывистых тяжей.…”

Section: результаты и обсуждениеunclassified

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

Kotousova¹,

Lebedev²,

Лебедев³

et al. 2018

Физика Твердого Тела

View full text Add to dashboard Cite

The method of reflection high-energy electron diffraction (RHEED) is used for studying the structure of graphene layers formed on the surface of the Si-face of conductive and semi-insulating 6 H - and 4 H -SiC(0001) substrates by thermal desorption of Si atoms in high vacuum, depending on the temperature and time of sublimating Si atoms as well as depending on the method of preprocessing the substrate surface. Diffraction patterns are recorded in the $$[\bar 12\bar 10]$$ [ 1 ¯ 2 1 ¯ 0 ] and $$[1\bar 100]$$ [ 1 1 ¯ 00 ] crystallographic directions of the substrates. It is found that in all experiments the formation of graphene layers occurs with a rotation of the graphene crystal lattice by 30° relative to the SiC lattice.

show abstract

Graphene formation mechanisms on4H-SiC(0001)

Cited by 124 publications

References 24 publications

Growth of large domain epitaxial graphene on the C-face of SiC

Growth of large domain epitaxial graphene on the C-face of SiC

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Электронно-дифракционное изучение структуры эпитаксиального графена, выращенного методом термодеструкции 6H- и 4H-SiC (0001) в вакууме

Contact Info

Product

Resources

About