Graphene, Graphene Oxide and Silicon Irradiation by Cluster Ions of Argon and Highly Charged Ions

Abstract

Defect formation in the samples of graphene, graphene oxide and silicon irradiated with Ar cluster and highly-charged ion irradiations were studied. Ar cluster ions, with acceleration energy E = 30 kV (Exogenesis nAccel00, Boston, USA) and total Ar cluster ion fluences ranged from 1x109cm-2to 1x1013cm-2were directed toward various surfaces. Highly-charged ions (HCI) bombardment on surfaces with highly charged Xeq+(q= 22) was employed at Eurasian National University, Kazakhstan, using a DC-60 cyclotron accelerator. Multi-layer graphene oxide, single-layer graphene- (SLG), few-layer of graphene (FLG) and polished Si are used for irradiation experiments. The study of irradiated samples was conducted by Raman spectroscopy, atomic force microscopy (AFM). Uniformly distributed defects and craters were observed on the surfaces of graphene, graphene oxide and silicon irradiated with cluster and HCI beams in our experiments. Ab-initio density-functional theory (DFT) was used to study point defects and molecular-dynamics (MD) simulations were used for studying formation of craters due to gas cluster ion impacts in graphene. The results of simulations were compared with experimental craters and surface shape.

Nanometer size hole fabrication in 2d ultrathin films with cluster ion beams

“…27,28 Our preliminary results on modification of graphene and graphene oxide surfaces by gas cluster ions and highly-charged ions have been published elsewhere. 29 In the present study, experimental results of irradiation of graphene and graphene oxide with Ar gas cluster ion beams are presented for the first time to the best of our knowledge. The irradiated samples were characterized with Raman spectroscopy and atomic force microscopy (AFM).…”