Abstract:The paper presents results related to graphene growth by the method of precipitation on the boundary between a transition metal (nickel or cobalt) and a dielectric (SiO2 ). The source of graphene is a thin evaporated carbon layer. Carbon in the annealing process diffunds through the transition metal and precipitates on the surface of the dielectric substrate as the structure cools down. Relatively thick layer of copper, which is evaporated over carbon as a cover, prevents carbon to diffund to the surface of th… Show more
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