Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air

Abstract

The excellent electronic and mechanical properties of graphene allow it to sustain very large currents, enabling its incandescence through Joule heating in suspended devices. Although interesting scientifically and promising technologically, this process is unattainable in ambient environment, because graphene quickly oxidises at high temperatures. Here, we take the performance of graphene-based incandescent devices to the next level by encapsulating graphene with hexagonal boron nitride (hBN). Remarkably, we found that the hBN encapsulation provides an excellent protection for hot graphene filaments even at temperatures well above 2000 K.Unrivalled oxidation resistance of hBN combined with atomically clean graphene/hBN interface allows for a stable light emission from our devices in atmosphere for many hours of continuous operation. Furthermore, when confined in a simple photonic cavity, the thermal emission spectrum is modified by a cavity mode, shifting the emission to the visible range spectrum. We believe our results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems.

Sensitive capacitive pressure sensors based on graphene membrane arrays

“…4a, indicating a very low amount of defects in the stacked graphene layers even after exposure to high temperatures 39 . This result is in agreement with the outstanding high-temperature stability of graphene when encapsulated by protective layers 40,41 and provides evidence that damage caused by the removal of polymer from suspended graphene is minimal [25][26][27][28] .…”

Light-induced irreversible structural phase transition in trilayer graphene

“…Figure 6a plots a color map of the G band position as a function of laser power, showing a continuous redshift with increasing laser power. We estimated the steady-state temperature T of TLG under laser irradiation using an established coefficient γ (0.011 cm −1 K −1 < γ < 0.016 cm −1 K −1 ) between the G band shift (Δv) and lattice temperature of TLG: T = 300 + Δω G /γ, where Δω G is the laser heatinginduced downshift of the Raman G peak [40][41][42][43] . As shown in Fig.…”

Hybrids of Fullerenes and 2D Nanomaterials

“…To this end, the hybridization of g-C 3 N 4 with other functional materials, including fullerenes, has been developed in recent years and appears feasible since the polymeric nature of g-C 3 N 4 renders the chemical structure flexible. [68][69][70][71][72] For these graphene-analogous 2D nanomaterials, especially g-C 3 N 4 and the TMD MoS 2 , no Review has reported their hybridization with fullerenes, which is crucial for understanding such intriguing 0D-2D hybrid systems. [56][57][58][59][60] MoS 2 , consisting of hexagonal rings with Mo and S atoms alternately located at the hexagon corners, is the most representative TMD with a direct band gap in monolayer form and high in-plane carrier mobility, thus being suitable for versatile applications in electro and photocatalysis, photovoltaics, and photoelectric devices.…”

“…To enhance the photocatalytic H 2 production activity of MoS 2 itself, the construction of nanocomposites composed of MoS 2 and other functional materials, such as graphenes and fullerenes, provides a practical solution . Similar concepts have been applied to construct hybrids of fullerene and other 2D nanomaterials, including hexagonal boron nitride (h‐BN) and black phosphorus (BP), though only a few reports are available, and charge transfer between fullerene and the 2D nanomaterials may occur, leading to certain performance improvements . For these graphene‐analogous 2D nanomaterials, especially g‐C 3 N 4 and the TMD MoS 2 , no Review has reported their hybridization with fullerenes, which is crucial for understanding such intriguing 0D–2D hybrid systems.…”