Graphene/h‐BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications

Abstract

1 of 7) 1600541 wileyonlinelibrary.com RESEARCH NEWSlayers, provides quite new properties and versatile applications beyond their single component. [6][7][8][9][10] As the most commonplace 2D vertical heterostructures, graphene/hexagonal boron nitride (denoted as G/ h -BN), have stimulated extensive interest since its construction by Dean et al. in 2010 by a layer-by-layer transfer method. [ 11 ] Subsequently, they have acted as prototype systems for exploring some novel physics issues, such as commensurate-incommensurate transitions and Hofstadter's butterfl y effect. [12][13][14][15][16] More signifi cantly, such heterostructures have also dramatically stimulated the applications of graphene in nanoelectronics, photo-detection, and energy harvesting/conversion. [ 11,[17][18][19][20][21][22][23] As an example, G/ h -BN heterostructures have yielded so far the carrier mobilities as high as 350 000 cm 2 V −1 s −1 , owing to the atomically fl at and dangling-bond-free feature of h -BN that greatly avoids the interface charge transfer. [ 11,17,18 ] Securing reliable and robust methods for fabricating large area, high quality, stacking geometry controllable heterostructures becomes the most signifi cant step for related fi elds. To date, three typical strategies have been developed to produce G/ h -BN heterostructures, including layer-by-layer transfer of separately exfoliated 2D layers, [ 11,17,[24][25][26] chemical vapor deposition (CVD) via an epitaxial mechanism, [27][28][29][30][31][32] and co-segregation from solid C and BN precursors. [ 33 ] Of particular note, the latter two methods have just been established in the last two years. Obviously, the layer-by-layer stacking of exfoliated materials can afford high-quality samples suitable for proof-of-concept device fabrications, whilst CVD and co-segregation routes are promising for the large-scale, thickness uniform, interface-clean, stacking geometry controllable synthesis of G/ h -BN, mainly mediated by a vdW epitaxy mechanism.In this research news, we highlight the recent development towards the fabrication, characterization, as well as versatile applications in energy-effi cient nanoelectronics and energy conversion/harvesting of the G/ h -BN heterostructures. We aim to provide a broad, but not exhaustive summary of the latest advances in this exciting fi eld. We conclude with the main challenges and possible opportunities that researchers in this fi eld are facing. Overview of Controllable Preparation of G/ h -BN HeterostructuresPreparing G/ h -BN heterostructures is at current a hot issue with growing interests. Several reliable methods have been Vertical heterostructures based on two-dimensional (2D) layered materials such as graphene and hexagonal boron nitride have emerged as a new paradigm of functional materials. Representing the thinnest and most commonplace 2D heterostructures, graphene/ h -BN, have recently attracted considerable attentions due to their remarkable morphological, electrical, and thermal properties. Herein, this research news highlig...

Ultrafine monolayer Co-containing layered double hydroxide nanosheets for water oxidation

“…In the past few years, two-dimensional (2D) ultrathin nanomaterials (other than graphene) have attracted enormous attention in electrocatalysis [1,2] , photocatalysis [3,4] and other catalytic applications due to their highly accessible active sites and enhanced catalytic performance compared with conventional 3D nanocatalysts [5] . For example, using ultrasonic exfoliation or solutionphase synthetic routes, monolayer nanosheets of graphitic carbon nitride (g-C 3 N 4 ) [4] , hexagonal diatomic boron nitride ( h -BN) [6] , transition metal dichalcogenides (TMDs) [2,7] and black phosphorus [8] have been successfully synthesized. In most cases, these 2D materials offered dramatically improved catalytic activity compared with their bulk counterparts.…”

Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures

“…Although there have been many excellent review articles on 2D heterostructures (mostly on vertical heterostructures), a comprehensive review on the lateral heterostructures is still imminent. Here we present a broad overview of current status on this fast‐growing field, covering both the experimental progress and the key theoretical understandings.…”

“…However, each of these 2D materials has its intrinsic shortcoming, e.g., zero gap in graphene, instability of phosphorene upon oxidation, low carrier mobility in MoS 2 , etc. To overcome these shortcomings and realize the device design, one may resort to 2D heterostructures, which combine distinct 2D layers with various functionalities.…”

Microscopic insight into the single step growth of in-plane heterostructures between graphene and hexagonal boron nitride

“…We also show that by varying the deposition conditions very small h-BN/graphene Janus nanodots can be formed with a high yield. Furthermore, the large density of interfaces that can be obtained by this synthesis protocol, provides the ideal material platform for studying the catalytic properties of in-plane heterostructures [16,17,18,56,57], and their defectivity [58].…”