Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact

Abstract

Two-dimensional (2D) Janus semiconductor materials have shown significant potential in the fields of electronics and optoelectronics. The problem of interface contact with electrodes is still faced in the preparation of 2D devices based on them. In this work, we study the interfacial properties of the 2D Janus M 2 OS (M = Ga, In) material in contact with graphene by using ab initio density functional calculations. The results show that an n-type quasi-Ohmic contact (Ohmic contact) is formed regardless of whether the graphene electrode is in contact with the O or S surface of Ga 2 OS (In 2 OS). The heterostructures of graphene and M 2 OS have a very strong Fermi level pinning effect at the interface due to the gap states and the interface dipole. The layer spacing almost does not affect the contact behavior, which is very advantageous for the preparation of devices. The robust Ohmic contact behavior makes M 2 OS very competitive in building next-generation nanoelectronic devices.

A resilient type-III broken gap Ga 2 O 3 /SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

“…Van der Waals (vdW) bilayer heterostructure, comprising two different atomically thin layers of two-dimensional (2D) materials stacked vertically, has attracted significant research attention [1][2][3][4][5][6][7] .…”

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property

“…Van der Waals (vdW) bilayer heterostructure, comprising two different atomically thin layers of two-dimensional (2D) materials stacked vertically, has attracted significant research attention [1][2][3][4][5][6][7] . The remarkable potential of heterostructures to effectively integrate diverse 2D materials at the atomic level renders them an ideal foundation for an extensive range of electrical and optoelectronic applications [8][9][10][11][12][13][14][15] .…”