“…were used to calculate the positions of TiO 2 and N-GQDs in terms of valence band (VB) and conduction band (CB).where α is the absorption coe cient, h represents Planck's constant, ν refers to frequency of the light, A is the proportional constant, E g is the energy of band gap, E VB stands for the edge potential of VB, χ is the electronegativity of the semiconductor (about 5.81 eV for TiO 2(Hao et al 2016)), E e represents the energy of free electrons on the hydrogen scale (about 4.5 eV vs. NHE) and E CB is the edge potential of CB.As shown in Fig.10(b), the calculated E g values of neat TiO 2 , N-GQDs and TGs 4 composites were 3.20, 2.44 and 3.01 eV, respectively, and the E VB value of TiO 2 was calculated to be 2.91eV. According to previous study, the E VB of N-GQDs was about 1.41 eV(Ma et al 2021). Consequently, the E CB values of TiO 2 and N-GQDs were estimated to be -1.03 and − 0.29 eV, respectively.…”