Graphene Synthesis Using a CVD Reactor and a Discontinuous Feed of Gas Precursor at Atmospheric Pressure

Abstract

The present work shows a new method in order to cost-effectively achieve the synthesis of graphene by Chemical Vapor Deposition (CVD). Unlike most usual processes, where precursors such as argon, H 2 , CH 4 , and high purity copper foil are used, the proposed method has replaced the previous ones by N 2 , N 2 (90%) : H 2 (10%), C 2 H 2 , and electrolytic copper (technical grade) since the use of industrialized precursors helps reduce production costs. On the other hand, the process was modified from a continuous flow system with vacuum to a discontinuous one at atmospheric pressure, eliminating the use of vacuum pump. In addition, this modification optimized the consumption of gases, which reduced the waste and the emission of pollutant gases into the atmosphere. Graphene films were grown under different gas flowrates and temperatures. Then, the obtained material was characterized by TEM, Raman spectroscopy, and AFM, confirming the presence of few graphene layers. In brief, the growth time was reduced to six minutes with acetylene as a carbon precursor at 1000 ∘ C and at atmospheric pressure, with a flow rate of 30 sccm. Finally, the reported conditions can be used for the synthesis of good quality graphene films in industrial applications.

A review on graphene based transition metal oxide composites and its application towards supercapacitor electrodes

“…The process is completed in four stages (cleaning, precursor injection, reaction time, and cooling). The use of saturated and unsaturated hydrocarbons is crucial for CVD graphene synthesis [208,209]. C 2 H 2 has a favorable free energy development of Gibbs with a value of approximately = 209 kJ/mol, suggesting that reactants are favored in the following reaction: 2C + H 2 = C 2 H 2 [209].…”

“…The use of saturated and unsaturated hydrocarbons is crucial for CVD graphene synthesis [208,209]. C 2 H 2 has a favorable free energy development of Gibbs with a value of approximately = 209 kJ/mol, suggesting that reactants are favored in the following reaction: 2C + H 2 = C 2 H 2 [209]. Using dark and light field illumination mode, typical micrographs can be achieved by electron beam microscopy.…”

A Review on the Development of Tunable Graphene Nanoantennas for Terahertz Optoelectronic and Plasmonic Applications

“…Nevertheless, silicon carbide is generally utilized as a ground substrate in high-speed optoelectronics. The immediate development of monolayer graphene on silicon carbide bypasses the need of extra substrate growth and this is beneficial for graphene use in silicon carbide electronic components such as LEDs and ultrahigh-frequency transistors [319,320]. However, special consideration must be kept throughout the EG growth process because the non-self-limiting nature of thermal decomposition and the high cost of silicon carbide wafers restrict the huge production of pure monolayer graphene on the surface of silicon carbide [321].…”

Characteristics of Highly Area‐Mismatched Graphene‐to‐Substrate Transfers and the Predictability of Wrinkle Formation in Graphene for Stretchable Electronics

“…Graphene synthesis by chemical vapor deposition (s) is comprised of two significant steps: graphene growth on a catalytic surface and graphene transfer. [ 1–3 ] The catalytic surface conditions control the nature of the graphene growth during the synthesis process including characteristics such as the number of layers, domain size, and defectiveness. [ 4–9 ] However, Cu surface morphological conditions not only affect the properties of the graphene but also can lead to area mismatch between the graphene and transfer substrate.…”