Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

Solovan, M. N.; Andrushchak, G. O.; Mostovyi, Andrii I.; Kovalyuk, T. T.; Брус, В. В.; Maryanchuk, P. D.

doi:10.1134/s1063782618020185

Cited by 4 publications

(4 citation statements)

References 15 publications

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“…Capacitance-voltage (C-V) characterization was performed to further investigate the properties of the interface/barrier in the C/6H-SiC devices. The 'true' capacitance (C) is evaluated using the formula 26,27 :…”

Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Pham

Tran

Holland

et al. 2019

Journal of Elec Materi

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Energetically deposited graphitic carbon (C) is known to form high-endurance rectifying contacts to a variety of semiconductors. Graphitic contacts to n-type 6H-SiC have demonstrated current rectification ratios (at ± 1.5 V) up to 1:10 6. In this article, the current voltage temperature (I-V-T) characteristics of these devices are examined to reveal more detail on the junction/barrier properties that are critical to performance. Analysis of the I-V-T characteristics and disparity between barrier heights extracted from the I-V-T data and C-V data show inhomogeneity in the contacts and this has been quantified. Accounting for the inhomogeneity, the homogeneous Richardson constant of the n-type 6H-SiC can be extracted from the I-V-T data, and this value agrees with the reported theoretical value.

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Section: Resultsmentioning

confidence: 99%

Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Pham

Tran

Holland

et al. 2019

Journal of Elec Materi

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“…Перед початком нанесення плівок графіту, (слідуючи за технологією -«олівець-на-напівпровіднику» [12][13][14][15][16][17]), одну з поверхонь свіжосколеної монокристалічної соляної підкладки (NаCl) механічно шліфували до шорсткості Rа=0,2 мкм, R z =0,23 мкм і R mаx =1,1 мкм. Якісна графітова плівка малювалася на попередньо Опромінення зразків пучком електронів призвело не тільки до утворення вторинних і відбитих електронів, а також викликало появу характеристичного Х-хвильового випромінювання (типові залежності представлено на рис.…”

Section: експериментальна частинаunclassified

Structural, Electrical and Optical Properties of Graphite Films are Drawn with Pencils of Different Hardness

Kuryshchuk

Kovalyuk

Koziarskyi

et al. 2022

EEJP

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The paper presents the results of studying the structural, optical and electrical properties of thin films of graphite depending on the hardness of the rods (2H, H, HB, B and 2B) obtained by the "Pencil-on-semiconductor" method. Such studies are of great importance for the further development of highly efficient devices based on heterojunctions for electronics and optoelectronics. Typical images of the surface formed by reflected electrons (BSE) were obtained using a scanning electron microscope and shown at three magnifications (100x, 500x and 1000x). Since the cores of the studied pencils consist of mixtures of clay and graphite, a more detailed analysis of the elements that make up the cores was conducted. EDS analysis showed that the main components of the studied rods are purified graphite powder, as well as O, Al and Si, which are part of kaolin whose formula is H4Al2Si2O9, or Al2O3 • 2SiO2 • 2H2O - the main component of ordinary clay. The elemental composition of the microvolume of the studied samples was also determined. Regardless of the error that occurs when determining the composition of C and O (~ 12%), it can be argued that there is still a regularity between the graphite content and the hardness of the pencil. That is, the higher the graphite content, the softer the rod. The thickness of the graphite films was measured using the MII-4 interferometer according to the standard method. The average thickness of all investigated films was ~ 150 nm since the thickness of the films obtained by this method is mainly determined by the roughness of the surface of the salt substrate. Drawn graphite films have a higher resistivity than bulk samples (pencil rods) from which they were made. The resistance of the films increases with an increase in the hardness of pencils, due to an increase in the number of clay impurities in graphite, which is a dielectric. It was found that an increase in stick hardness leads to an increase in transmission.

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“…Зокрема, ми показали можливість виготовлення тонких плівок графіту двома методами: простим методом перенесення графітової плівки, нарисованої на соляній (NaCl) підкладинці, для виготовлення високоякісних фоточутливих бар'єрних структур «олівець на напівпровіднику» [6,7] та методом електронно-променевого випаровування [7,8]. Цими методами нами було виготовлено фоточутливі структури графіт/SiC [9,10] і графіт/CdTe [11,12].…”

Section: вступunclassified

Photosensitive Schottky Graphite/n-Si Diodes Fabricated by Electron Beam Evaporation

2021

Nanosistemi, Nanomateriali, Nanotehnologii

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Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

Cited by 4 publications

References 15 publications

Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Temperature-Dependent Electrical Characteristics and Extraction of Richardson Constant from Graphitic-C/n-Type 6H-SiC Schottky Diodes

Structural, Electrical and Optical Properties of Graphite Films are Drawn with Pencils of Different Hardness

Photosensitive Schottky Graphite/n-Si Diodes Fabricated by Electron Beam Evaporation

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