Graphite to diamond transformation under shock compression: Role of orientational order

Volz, Travis J.; Gupta, Y. M.

doi:10.1063/1.5108892

Cited by 20 publications

(9 citation statements)

References 43 publications

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“…High-quality graphene with low O and defect concentrations can be grown on catalyst metals at high temperatures (∼1100 °C) by using CVD; however, the high deposition temperature and use of catalyst metals limit its practical applicability as a etch resist. Here, we prepared wafer-scale nanocrystalline graphene (nc-G) films directly on SiO 2 via inductively coupled plasma (ICP)-CVD. Figure A shows a photograph of the direct-deposited nc-G film on a 6 in. SiO 2 wafer.…”

Section: Resultsmentioning

confidence: 99%

Graphene-Based Etch Resist for Semiconductor Device Fabrication

Kim

Seol

Cho

et al. 2020

ACS Appl. Nano Mater.

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As the feature size of semiconductor devices decreases, the resist layer with high etch resistance is required to achieve fine pattern transfer during lithography. Conventional resists (e.g., amorphous carbon layers and polycyclic aromatic hydrocarbon films) have reached the limit of etch resistance. Here, we proposed graphene as an etch resist in lithographic process for future semiconductor device. First-principles simulation and experimental reactive ion etching (RIE) revealed that the etch resistance of single-layer graphene (SLG) with the sp 2 carbon fully connected hexagonal structure is superior to that of conventional carbon resist, with an etch selectivity against SiO 2 reaching ∼20. Furthermore, we experimentally confirmed that wafer-scale graphene films, prepared via complementary metal oxide semiconductor (CMOS)-compatible processes, show etch resistances several times higher than those of conventional resists and allow successful pattern transfer to the underlying substrate. This study demonstrates the potential of graphene as an advanced etch resist for future lithographic technologies.

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Section: Resultsmentioning

confidence: 99%

Graphene-Based Etch Resist for Semiconductor Device Fabrication

Kim

Seol

Cho

et al. 2020

ACS Appl. Nano Mater.

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“…The compression energy in benzene shocked to 55 GPa ( E = 1/2 ( P 1 − P 0 )( V 0 − V ) = 26.5 GPa cm 3 /g) is far greater than that for graphite shocked to the same shock pressure ( E = 5 GPa cm 3 /g) 57 , 58 . The increased compression energy results in higher temperature and greater entropy rise on the principal Hugoniot at the same shock pressure 36 , 49 , 57 , 58 . We expect these effects, and starting from a disordered liquid phase, drive the products to more-disordered solid structures, and result in incomplete conversion to the diamond at the measured shock conditions.…”

Section: Discussionmentioning

confidence: 99%

“…Here, we investigate the shock-driven chemistry of benzene, a central molecule in organic chemistry both as a building block for molecular compounds, and as a model of chemical stability derived from its 4n + 2 π-electron cyclic aromaticity, using in situ femtosecond (fs)-duration x-ray pulses from an x-ray free-electron laser (XFEL) at the Linac Coherent Light Source (LCLS) [28][29][30] . High brilliance x-rays have only recently been used to probe transformations in solid carbon under shock wave compression and detonation [31][32][33][34][35][36] . We report the transformation of liquid benzene to solid products on the timescale of the shock duration (10-20 ns) and identify carbon or hydrocarbon product species formed at these extreme conditions through analysis of x-ray diffraction and small-angle x-ray scattering.…”

mentioning

confidence: 99%

Carbon clusters formed from shocked benzene

et al. 2021

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Benzene (C6H6), while stable under ambient conditions, can become chemically reactive at high pressures and temperatures, such as under shock loading conditions. Here, we report in situ x-ray diffraction and small angle x-ray scattering measurements of liquid benzene shocked to 55 GPa, capturing the morphology and crystalline structure of the shock-driven reaction products at nanosecond timescales. The shock-driven chemical reactions in benzene observed using coherent XFEL x-rays were a complex mixture of products composed of carbon and hydrocarbon allotropes. In contrast to the conventional description of diamond, methane and hydrogen formation, our present results indicate that benzene’s shock-driven reaction products consist of layered sheet-like hydrocarbon structures and nanosized carbon clusters with mixed sp2-sp3 hybridized bonding. Implications of these findings range from guiding shock synthesis of novel compounds to the fundamentals of carbon transport in planetary physics.

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“…The first technique uses a shock wave that is produced either by an explosion, by a projectile or by a laser. In most cases, precursor was graphite with different grade/crystalinity [ 157 , 158 , 159 , 160 ]. Other materials such as fullerene [ 161 ], black carbon, amorphous carbon, adamantane [ 162 ] and even rock containing graphite [ 163 ] were also used.…”

Section: On the Way To Catalyst-free/binderless Synthetic Diamondsmentioning

confidence: 99%

A Review of Binderless Polycrystalline Diamonds: Focus on the High-Pressure–High-Temperature Sintering Process

2022

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Nowadays, synthetic diamonds are easy to fabricate industrially, and a wide range of methods were developed during the last century. Among them, the high-pressure–high-temperature (HP–HT) process is the most used to prepare diamond compacts for cutting or drilling applications. However, these diamond compacts contain binder, limiting their mechanical and optical properties and their substantial uses. Binderless diamond compacts were synthesized more recently, and important developments were made to optimize the P–T conditions of sintering. Resulting sintered compacts had mechanical and optical properties at least equivalent to that of natural single crystal and higher than that of binder-containing sintered compacts, offering a huge potential market. However, pressure–temperature (P–T) conditions to sinter such bodies remain too high for an industrial transfer, making this the next challenge to be accomplished. This review gives an overview of natural diamond formation and the main experimental techniques that are used to synthesize and/or sinter diamond powders and compact objects. The focus of this review is the HP–HT process, especially for the synthesis and sintering of binderless diamonds. P–T conditions of the formation and exceptional properties of such objects are discussed and compared with classic binder-diamonds objects and with natural single-crystal diamonds. Finally, the question of an industrial transfer is asked and outlooks related to this are proposed.

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Graphite to diamond transformation under shock compression: Role of orientational order

Cited by 20 publications

References 43 publications

Graphene-Based Etch Resist for Semiconductor Device Fabrication

Graphene-Based Etch Resist for Semiconductor Device Fabrication

Carbon clusters formed from shocked benzene

A Review of Binderless Polycrystalline Diamonds: Focus on the High-Pressure–High-Temperature Sintering Process

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