Graphitized carbon with hierarchical mesoporous structure templated from colloidal silica particles

Synthesis of metal-incorporated graphitic microporous carbon terminated with highly-ordered graphene walls—Controlling the number of graphene layers by ambient-temperature metal sputtering

“…Inset of Fig. 1 bands are observed in the samples, which are typical of partially graphitic micro/mesoporous carbon reported earlier [3,13,15]. Especially, the existence of the G-band, which corresponds to the interplanar sp 2 -bonded carbon lattice within multilayer graphene structure, depicts the formation of well-defined graphitic domains within the microporous network in the form of multilayer graphene walls.…”

“…The relatively high intensity of the D peak in these samples is most probably due to the formation of considerable amount of edges of graphene sheets in the form of 'wrinkles' generated by the showering of sputtered metal nanoparticles [9] and corroborated by HRTEM micrographs (shown later). Especially, the G-to-D peak intensity ratio (I G /I D ), which determines the degree of graphitization, is found to be in and around 1.0 (0.95-1.2) in these samples, indicating well-ordered graphitized domain formation, whereas the previously reported partially graphitic porous carbon samples showed this ratio to be considerably less than 1.0 (0.48-0.56), indicating disordered semi-graphitized wall formation within the porous carbon network [3,13,15]. A comparison of various methods used and corresponding properties of previously reported partially graphitic porous carbon nanostructures with respect to the current study is presented in Table 2.…”

“…The fabrication techniques of partially graphitic micro/mesoporous carbon include template-based syntheses followed by annealing at elevated temperature for carbonization and graphitization [1][2][3][13][14][15][16][17], whereas activation of carbon materials by some chemical etchants is also used for the formation of microporous carbon [1,18]. But most of these processes are solution-based, and therefore, not compatible to modern solid state device fabrication techniques, especially, the complementary-metal-oxide-semiconductor integrated-circuit (CMOS IC) fabrication industry, and hence, not commercially viable.…”

“…But most of these processes are solution-based, and therefore, not compatible to modern solid state device fabrication techniques, especially, the complementary-metal-oxide-semiconductor integrated-circuit (CMOS IC) fabrication industry, and hence, not commercially viable. Also, the general trend of high temperature treatments for improved graphitization of high surface area carbon nanostructures [2,[15][16][17] may not be suitable, in practice, for low-cost high throughput processes. Several groups attempted ambienttemperature electron or ion irradiation to solid carbon sources to locally graphitize the samples [19][20][21].…”

Magnetically-separable hierarchically porous carbon monoliths with partially graphitized structures as excellent adsorbents for dyes

“…Although some works have been performed in the development of HPCMs [12,13], few attentions have ever been directed towards the synthesis and applications of hierarchically porous carbon monoliths with graphitic structures (HPCM-Gs) [14][15][16]. From the viewpoint of applications, graphitic carbon has some advantages over traditional amorphous carbon, for example, the welldeveloped crystalline structure, intensive interaction of graphitic basic plane with organic dye molecular, good chemical and thermal stability [17][18][19][20][21]. However, until now no fabrication of magnetically-separable HPCM-Gs has been attempted, only few reports regarding carbon powder materials of this type [22,23] In this study, the magnetically-separable hierarchically porous carbon monoliths with partially graphitized structures have been successfully synthesized by using commercial polyurethane (PU) foam as macroporous scaffold associated with a direct carbonization process from triblock copolymer F127, phenolic resol and Fe(NO 3 ) 3 Á9H 2 O.…”