Grazing incidence x-ray scattering: an ideal tool to study the structure of quantum dots

Metzger, T. H.; Kegel, I.; Paniago, R.; Peisl, J.

doi:10.1088/0022-3727/32/10a/339

Cited by 41 publications

(25 citation statements)

References 16 publications

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“…Due to a relaxed resolution in one of the three components of the scattering wave vector, these experiments are possible in laboratory-based experimental setups. In GISAXS experiments however, the high demand on collimation makes the use of synchrotron radiation advantageous [19,20,21,22]. Because polymeric samples are weakly scattering in the X-ray regime as compared to metals, semiconductors, or ceramics, GISAXS experiments on nanostructured polymer films are basically limited to synchrotron radiation [11,12,13,14,15].…”

Section: Introductionmentioning

confidence: 99%

Grazing incidence small-angle X-ray scattering: an advanced scattering technique for the investigation of nanostructured polymer films

2003

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Hamburg workshop on the "application of synchrotron radiation in chemistry"With grazing incidence small-angle X-ray scattering (GISAXS) the limitations of conventional small-angle X-ray scattering with respect to extremely small sample volumes in the thin-film geometry are overcome. GISAXS turned out to be a powerful advanced scattering technique for the investigation of nanostructured polymer films. Similar to atomic force microscopy (AFM), a large interval of length between molecular and mesoscopic scales is detectable with a surface-sensitive scattering method. While with AFM only surface topographies are accessible, with GISAXS the buried structure is also probed. Because a larger surface area is probed, GISAXS also has a much larger statistical significance compared to AFM. Due to the high demand on collimation, GISAXS experiments are based on synchrotron radiation. Nanostructures parallel and perpendicular to the sample surface observable in thin poly(styrene- block-isoprene) diblock copolymer films are presented as an example of the possibilities of GISAXS.

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Section: Introductionmentioning

confidence: 99%

Grazing incidence small-angle X-ray scattering: an advanced scattering technique for the investigation of nanostructured polymer films

2003

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“…The appearance of correlation peaks around the Bragg peak reveals the pattern formation and the crystalline character of the nanodot structures. 8 The peak position is related with and shifts towards smaller q values ͑larger distances͒ as the ion dose increases. Additionally, the correlation peak becomes more intense and sharpens with ion dose, indicating the enhancement of ordering.…”

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confidence: 98%

“…The quantificatio of and by GID is done through a spectral fittin that considers the convolution of form and structure functions. 8 Figures 3͑a͒ and 3͑b͒ compare the values of and , respectively, obtained independently by AFM and GID. The AFM data are obtained by averaging over the results of up to three samples processed under the same conditions for each sputtering time ͑bars comprise statistic and sampling errors͒ whereas, due to limited access, synchrotron analysis was only performed on selected samples.…”

mentioning

confidence: 99%

Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

Gago

Vázquez

Plantevin

et al. 2006

Applied Physics Letters

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The temporal evolution of the characteristic wavelength ͑͒ and ordering range ͑͒ of self-organized nanodot patterns induced during Ar + ion beam sputtering on Si͑001͒ and Si͑111͒ surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of ͑up to 54-60 nm͒ and increase in ͑up to 400-500 nm͒ after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si͑111͒ surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirme by theoretical simulations. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2398916͔The current road to miniaturization demands for lowcost and large-scale compatible nanopatterning methods with reproducible and controllable features, achievement of high in-plane ordering being a crucial issue, e.g., for ͑opto͒elec-tronic devices.1 Ion beam sputtering ͑IBS͒ is a promising technique since it induces self-organized regular patterns over large areas ͑several cm 2 ͒ onto metal, semiconductor, and insulator surfaces after a few minutes of irradiation.2 In particular, ripple 3 and nanodot 4 morphologies can be produced onto amorphous materials or crystalline surfaces that amorphize upon ion bombardment. Theoretically, pattern formation by IBS can be understood as the interplay between the ͑unstable͒ dependence of the sputtering yield on surface curvature and stabilizing surface relaxation mechanisms such as surface diffusion. 5Complete understanding and control of the physical mechanisms involved in pattern formation by IBS is still lacking, issues such as crystallinity, in-plane correlation, and order remaining to be understood. Here, we study the time evolution of the quality of nanodot patterns induced by IBS onto the relevant Si͑001͒ and Si͑111͒ surfaces, in terms of in-plane order and correlation. Our results indicate that the pattern dynamics is qualitatively independent of the surface orientation, together with the occurrence of coarsening of the characteristic wavelength and simultaneous improvement of the short-range hexagonal order ͑as described by the correlation length ͒. Both features stabilize for long enough times, the Si͑111͒ surface reaching earlier a proper stationary state as a result of its faster dynamics. We correlate this fact with the increased sputtering rate ͑SR͒ measured onto this orientation, which is confirme through comparison with theoretical models of IBS pattern formation.Si͑001͒ and Si͑111͒ samples ͑p type, 0.3-1 ⍀ cm͒ were sputtered at normal incidence as described in Ref. 6. The SR was determined experimentally in all the processed samples by partially masking them during the sputtering process and measuring the resulting step edge height with a profilomete . It was observed that the SR was ϳ10% higher for Si͑111͒ than for Si͑001͒. The resulting surface topography was imaged by atomic force microscopy ͑AFM͒ with a Nanoscope IIIa equipm...

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“…In the past 20 years high resolution X-ray diffraction (HRXRD) was widely applied for the non-destructive investigation of laterally patterned nanostructures [44][45][46][47][48]. In the symmetrical HRXRD, the vertical lattice parameter of the crystal is probed.…”

Section: 5mentioning

confidence: 99%

Growth and characterization of site‐selective quantum dots

Helfrich

Schroth

Grigoriev

et al. 2012

Physica Status Solidi (a)

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A review on the growth and characterization of site-selective quantum dots (QDs) is presented. First, a theoretical model is used to describe the mechanism leading to the formation of QDs at pre-defined locations. The structural properties of siteselective QDs was revealed and their optical quality was tested. Various parameters, such as hole size, hole depth, or InAs amount, influencing the QD occupation and the QD size are discussed and possible ways to control these are presented.Ordered QD array with multiple dot nucleation (left) and single QD in dry etched hole (right).

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Grazing incidence x-ray scattering: an ideal tool to study the structure of quantum dots

Cited by 41 publications

References 16 publications

Grazing incidence small-angle X-ray scattering: an advanced scattering technique for the investigation of nanostructured polymer films

Grazing incidence small-angle X-ray scattering: an advanced scattering technique for the investigation of nanostructured polymer films

Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering

Growth and characterization of site‐selective quantum dots

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