Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10−3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet‐printing and field‐effect transistors were constructed using poly(3‐hexylthiophene) (P3HT) as organic semiconductor.