Great enhancement of pyroelectric properties for Ba0.65Sr0.35TiO3 films on Pt–Si substrates by inserting a self-buffered layer

Abstract

Articles you may be interested inEffect of misfit strain and surface roughness on the tunable dielectric behavior of Ba 0.5 Sr 0.5 TiO 3 thin films The dielectric and tunable properties of Mn doped ( Ba 0.6 Sr 0.4 ) 0.925 K 0.075 TiO 3 thin films fabricated by sol-gel method Characteristics of metal-ferroelectric-insulator-silicon structures with ferroelectric ( Pb 0.8 Ba 0.2 ) Zr O 3 thin films and ( Ba 0.5 Sr 0.5 ) Ti O 3 buffer layer

High pyroelectric response of lead zirconate stannate titanate based antiferroelectric ceramics with low Curie temperature

“…(1). Recently, in order to improve the pyroelectric response of BST materials, various technologies have been done such as dopant [11][12][13], porous BST [14] and BST film [8,[15][16][17][18][19][20][21][22]. However, there are still many problems.…”

“…In dielectric mode, the ferroelectric-paraelectric transition temperature should be in the region of Curie temperature, which is different from conventional pyroelectric mode which needs sufficiently high transition temperature so that the pyroelectric response is reversible and stable. Besides, in this mode, because the samples are not poled, the spontaneous polarization is absent or very small and the variation in dielectric permittivity by incident heating gives rise to a detectable signal voltage, so the pyroelectric coefficient can be written as [8].…”

Optimization of (100)-Si TMAH etching for uncooled infrared detector

“…As shown in Fig. 9, the response voltage was modulated by a 21Hz chopping frequency, indicating that the response signal resulted from the pyroelectric properties of the BST thin film rather than the trapped charge release [10]. The responsivity R V and detectivity D* are defined as…”

“…7. On the top face of (100)-Si substrate with patterned Pt/Ti bottom electrode, Ba 0.65 Sr 0.35 TiO 3 thin film was deposited by RF sputtering on the Pt/Ti electrode, then NiCr top electrode was deposited by DC sputtering and patterned using lift-off technique in sequence [10] ( Fig.7.a). Etching windows, defining the membrane size, were patterned and opened on both front and back side of the substrate using SiO 2 film as the mask [11] (Fig.7.b, 7.c).…”

“…Whereafter, suspending silicon membrane was fabricated by optimum etching condition using TMAH solution [10].…”