2011
DOI: 10.1039/c0py00345j
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Green-and-red photoluminescence from Si–Si and Ge–Ge bonded network homopolymers and copolymers

Abstract: Recently, we found pure green photoluminescence (PL) at 540 nm (2.34 eV) in a vacuum, which is characteristic of a Si-Si bonded network polymer bearing n-butyl groups (organopolysilyne, SNP). SNP was carefully isolated as an orange-yellow solid by avoidance of contact with air and water in the polymer synthesis and PL measurement. This was in contrast with previous reports that SNPs carrying alkyl groups have a blue PL band around 450-480 nm. By applying the modified technique to a soluble Ge-Ge bonded network… Show more

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Cited by 9 publications
(6 citation statements)
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“…For the present (GeH 2 ) n samples, optical band gap depends upon mode of preparation and is a reflection of their morphology; optical band gaps of 2.70 and 2.31 eV were obtained for (GeH 2 ) n prepared using Methods 1 and 2, respectively. We also note that while Urbach tails were observed for both samples, it is more prevalent for (GeH 2 ) n prepared using Method 1 and reflects a lack of long-range ordering. , …”
Section: Resultsmentioning
confidence: 70%
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“…For the present (GeH 2 ) n samples, optical band gap depends upon mode of preparation and is a reflection of their morphology; optical band gaps of 2.70 and 2.31 eV were obtained for (GeH 2 ) n prepared using Methods 1 and 2, respectively. We also note that while Urbach tails were observed for both samples, it is more prevalent for (GeH 2 ) n prepared using Method 1 and reflects a lack of long-range ordering. , …”
Section: Resultsmentioning
confidence: 70%
“…We also note that while Urbach tails were observed for both samples, it is more prevalent for (GeH2)n prepared using Method 1 and reflects a lack of long range order in the material. 30,43 The experimental values reported here agree well with first principles calculations reported by Zeng et al 11 who predicted a (GeH2)n band gap of 3.03 eV. These authors indicated that bandedge states in (GeH2)n arise primarily from the atomic orbital delocalized over the Ge backbone; in these systems the lowest unoccupied molecular orbital (i.e., LUMO; conduction band edge) arises from Ge 4s and 4px orbitals while the highest occupied molecular orbital (i.e., HOMO; valence band edge) is dominated by the Ge 4pz (along the Ge-Ge chain).…”
Section: Resultsmentioning
confidence: 99%
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“…49 The controlled electropolymerisation of diorganodichlorosilanes R 2 SiCl 2 enabled the synthesis of well-defined polysilane block copolymers such as [PhSiMe] m -b-[BuSiMe] n to be prepared. 50 A series of network polygermasilanes with tunable Si/Ge ratios in 0.25 increments were synthesised via Wurtz coupling of BuECl 3 co-monomers (E = Ge and Si) in the presence of alkali metal reductants; upon increasing incorporation of Ge into the 1-2 nm sized network domains, the observed PL became red-shifted and particles with pure Ge cores exhibited intense red-coloured photoluminescence at 690 nm at 77 K. 51 Highly promising photovoltaic dithienylgermole polymers such as 13 52 have been reported by a number of groups in 2011 with solar cell power conversion efficiencies (PCEs) as high as 4%. [52][53][54][55] An inverted BHJ solar cell featuring dithienylgermoles yielded an impressive PCE of 7.3%.…”
Section: Polysilanes Polygermanes Polystannanes Polycarbosilanes and ...mentioning
confidence: 99%
“…45 This result indicates that these SNPs possess either an a-Si skeleton or a skeleton with no long-range ordering. 29,46 Fig. 2 Fluoroalkyl fractions characterized by 1 H NMR and XPS as a function of the nominal mole feed fraction of 1 used during the preparation of F x B 1Àx SNP (x ¼ 0.25, 0.50 and 0.75).…”
Section: Ir and Raman Spectramentioning
confidence: 99%