Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

Xiang, Bin; Zhang, Hongzhou; Li, G. H.; Yang, Fan; Su, Fuhai; Wang, Rongming; Xu, Jun; Lü, Guowei; Sun, Xiaoxiao; Zhao, Qiang; Yu, Dapeng

doi:10.1063/1.1573334

Cited by 140 publications

(81 citation statements)

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“…We also consider that: (a) Transition metals such as Au typically behave as deep acceptors in Ⅱ-Ⅳ semiconductors [72]. Evidence of excitons bound at Au, Ag, or Cu acceptor sites was reported for bulk ZnTe [89], ZnSe [72], and also for ZnSe NWs [15]. In all cases, however, these were accompanied by the corresponding low-energy transition involving the deep acceptor site [16,72,89].…”

Section: Photoluminescence Of Individual Nanowiresmentioning

confidence: 99%

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Photoluminescence of CdSe nanowires grown with and without metal catalyst

et al. 2011

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We present temperature and power dependent photoluminescence measurements on CdSe nanowires synthesized via vapor-phase with and without the use of a metal catalyst. Nanowires produced without a catalyst can be optimized to yield higher quantum efficiency, and narrower and spatially uniform emission, when compared to the catalyst-assisted ones. Emission at energies lower than the band-edge is also found in both cases. By combining spatially-resolved photoluminescence and electron microscopy on the same nanowires, we show that catalyst-free nanowires exhibit a low-energy peak with sharp phonon replica, whereas for catalyst-assisted nanowires low-energy emission is linked to the presence of nanostructures with extended morphological defects.

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Section: Photoluminescence Of Individual Nanowiresmentioning

confidence: 99%

“…For direct band-gap NWs, PL is often measured over large ensembles [15][16][17][18][19][20][21][22]. This, however, can hinder the extrapolation of representative features as structural inhomogeneities may be present.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdSe nanowires grown with and without metal catalyst

et al. 2011

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“…These added impurities significantly affect the optical and electronic properties of the grown nanostructures. Xiang et al (2003) reported that the inclusion of Au catalyst into ZnSe nanowire results in strong green emission from the nanowire. Philipose et al (2008) reported that the ZnSe nanostructures grown in low vacuum condition exhibits stronger DL emissions than the much needed NBE emission for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Growth of ZnSe nano and microstructures at high vacuum by thermal evaporation

et al. 2013

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ZnSe nano and microstructures were grown on Si substrates in high vacuum by thermal evaporation at different source temperatures ranging from 850 to 950°C. Morphology, chemical composition and structural properties of these grown ZnSe nano and microstructures were studied using scanning electron microscope (SEM) and transmission electron microscope (TEM). SEM studies revealed that the morphology of grown structures contains nanowires, nanobelts and microcrystals. TEM studies showed that the grown nanowires and nanobelts are single crystalline in nature with growth direction along [110] of zinc blende structure. The room temperature photoluminescence (PL) spectra of these nanostructures grown at different temperatures exhibited a strong broad defect level (DL) emission peak and a weak narrow near band edge (NBE) emission peak. Further, the intensity of DL emission peak was found to increase with increase in source temperature.

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“…A large number of manuscripts have been published reporting the optical properties of NWs and the emerging picture is that individual growth methods and conditions severely affect NW optical properties in terms of emission intensity, spectral width and peak, and the presence of long wavelength components from impurity states that emit radiatively. A variety of NWs made from materials including ZnO [40], ZnS [41], GaN [42], CdS [28,46], CdSe [43], ZnSe [44], InP [45], and GaAs [46], have been extensively studied by steady state and transient PL spectroscopy. High quality NWs synthesized under controlled conditions at high temperatures typically emit brightly with a spectral peak near the band-edge.…”

mentioning

confidence: 99%

“…Optical properties of nanowires Photoluminescence (PL) data collected from individual direct-bandgap NWs can reveal a wealth of information, both in terms of characterization of the material and optical properties such as band-edge emission, trap states, radiative efficiency, carrier and photon confinement [24,28,[39][40][41][42][43][44][45][46][47][48][49]. A large number of manuscripts have been published reporting the optical properties of NWs and the emerging picture is that individual growth methods and conditions severely affect NW optical properties in terms of emission intensity, spectral width and peak, and the presence of long wavelength components from impurity states that emit radiatively.…”

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confidence: 99%

Semiconductor nanowires: optics and optoelectronics

2006

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Single crystalline semiconductor nanowires are being extensively investigated due to their unique electronic and optical properties and their potential use in novel electronic and photonic devices. The unique properties of nanowires arise owing to their anisotropic geometry, large surface to volume ratio, and carrier and photon confinement in two dimensions (1D system). Currently, tremendous efforts are being devoted to rational synthesis of nanowire structures with control over their composition, structure, dopant concentration, characterization, fundamental properties, and assembly into functional devices. In this article we will review the progress made in the area of nanowire optics and optoelectronic devices, including diodes, lasers, detectors, and waveguides, and will outline the general challenges that must be overcome and some potential solutions in order to continue the exponential progress in this exciting area of research.PACS 78.60.Fi; 78.67.Lt IntroductionThe shrinking of devices to smaller length scales in the microelectronics industry is becoming prohibitively expensive due to the physical limits imposed by standard lithography techniques [1]. As miniaturization of organized objects and devices remains the cornerstone for creating systems with enhanced functionality (greater computational power and speed, etc.), it is becoming increasingly clear that non-traditional approaches for creating and assembling devices will provide the keys to unlocking the limitless potential of next-generation computing, as well as new opportunities across scientific disciplines [2,3]. Chemists traditionally have been working on arranging and manipulating matter at the atomic scale with exquisite control over the spatial arrangement of atoms to form novel molecules. Utilizing such a "bottom up" paradigm to create and assemble devices from a specific arrangement of atoms or molecules has the potential to overcome the limitations of the conventional "top down" lithographic approaches by providing a methodology for control over lattice compositions, scaling of devices to the molecular scale, and minimal surface roughness. In particular, u Fax: +1 215 573 2128, E-mail: riteshag@seas.upenn.edu semiconductor nanowires (NWs) and nanotubes (NTs) offer a unique approach for the bottom-up assembly of electronic and photonic devices with the potential for on-chip integration of non-silicon based photonics with silicon nanoelectronics [4][5][6][7][8][9]. The unique geometries of NWs and NTs enable them to function as both active device elements and interconnects, which can lead to highly integrated device structures. However, the inability to control the electronic properties of NTs during synthesis and the difficulties associated with manipulating individual NTs presents a significant challenge in developing NT-based integrated devices.By contrast, the ability to rationally synthesize NWs with precisely controlled and tunable chemical composition, size, structure and morphology and to accurately dope them with both p a...

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Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

Cited by 140 publications

References 20 publications

Photoluminescence of CdSe nanowires grown with and without metal catalyst

Photoluminescence of CdSe nanowires grown with and without metal catalyst

Growth of ZnSe nano and microstructures at high vacuum by thermal evaporation

Semiconductor nanowires: optics and optoelectronics

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