Green-Solvent-Processed High-Performance Broadband Organic Photodetectors

Huang, Jianfei; Luong, Hoang Mai; Lee, Jaewon; Chae, Sangmin; Yi, Ahra; Qu, Zhong-Ze; Du, Zhifang; Choi, Dylan G.; Kim, Hyo Jung; Nguyen, Thuc-Quyen

doi:10.1021/acsami.3c09391

Cited by 11 publications

(2 citation statements)

References 56 publications

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“…Moreover, unlike other solution-processable materials such as quantum dots and mixed-metal perovskites, organic semiconductor materials are free from heavy metal toxicity, and the solution preparation methods are relatively simple, making them easy to operate. 20 One of the primary challenges in achieving high-efficient NIR optoelectronic semiconductors is the design and synthesis of active organic materials with absorption and emission capabilities in the NIR region. 21 At present, researchers have been able to realize NIR performance in polymers using strategies such as increasing conjugation lengths and enhancing the rigidity of the host.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Organic photoactive materials are accessible at low cost, ease of large-scale preparation, solution processability, , biocompatibility, and are endowed with customizable optoelectronic properties, offering tremendous promise in the field of optoelectronics. Moreover, unlike other solution-processable materials such as quantum dots and mixed-metal perovskites, organic semiconductor materials are free from heavy metal toxicity, and the solution preparation methods are relatively simple, making them easy to operate . One of the primary challenges in achieving high-efficient NIR optoelectronic semiconductors is the design and synthesis of active organic materials with absorption and emission capabilities in the NIR region .…”

Section: Introductionmentioning

confidence: 99%

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Customizable Organic Charge-Transfer Cocrystals for the Dual-Mode Optoelectronics in the NIR (II) Window

Yu,

Xia,

et al. 2024

J. Am. Chem. Soc.

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Organic molecules have been regarded as ideal candidates for nearinfrared (NIR) optoelectronic active materials due to their customizability and ease of large-scale production. However, constrained by the intricate molecular design and severe energy gap law, the realization of optoelectronic devices in the second near-infrared (NIR (II)) region with required narrow band gaps presents more challenges. Herein, we have originally proposed a cocrystal strategy that utilizes intermolecular charge−transfer interaction to drive the redshift of absorption and emission spectra of a series BF X TQ (X = 0, 1, 2, 4) cocrystals, resulting in the spectra located at NIR (II) window and reducing the optical bandgap to ∼0.98 eV. Significantly, these BF X TQ-based optoelectronic devices can exhibit dual-mode optoelectronic characteristics. An investigation of a series of BF X TQ-based photodetectors exhibits detectivity (D*) surpassing 10 13 Jones at 375 to 1064 nm with a maximum of 1.76 × 10 14 Jones at 1064 nm. Moreover, the radiative transition of CT excitons within the cocrystals triggers NIR emission over 1000 nm with a photoluminescence quantum yield (PLQY) of ∼4.6% as well as optical waveguide behavior with a low optical-loss coefficient of 0.0097 dB/μm at 950 nm. These results promote the advancement of an emerging cocrystal approach in micro/nanoscale NIR multifunctional optoelectronics.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Customizable Organic Charge-Transfer Cocrystals for the Dual-Mode Optoelectronics in the NIR (II) Window

Yu,

Xia,

et al. 2024

J. Am. Chem. Soc.

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Adopting Buffer Layer for Improving Signal‐to‐Noise Ratio of Broadband Photomultiplication Type Organic Photodetectors

Yang,

Zhao,

Wang

et al. 2024

Adv Funct Materials

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The photomultiplication type organic photodetectors (PM‐OPDs) are prepared with structure of ITO/PNDIT‐F3N/F8BT/Y6‐1O:P3HT (100:3, wt/wt)/Al, containing hole traps formed with P3HT surrounded by Y6‐1O in active layers. The PM‐OPDs exhibit external quantum efficiency (EQE)>100% in the spectral response range from 310 to 910 nm, resulting from electron tunneling injection assisted by trapped hole near ITO electrode. The incorporation of F8BT buffer layers can induce the markedly decreased dark current density (JD) due to the large electron injection barrier. The light current density (JL) of PM‐OPDs exhibits slightly decreased by inserting F8BT buffer layers due to the enhanced electron tunneling injection assisted by the more trapped holes near ITO electrode. The signal‐to‐noise ratio (SNR) of PM‐OPDs achieves over 40‐fold increment by inserting appropriate thickness of F8BT buffer layers, resulting from the markedly decreased JD and reasonably high JL. The optimal PM‐OPDs exhibit excellent photodetection capability with EQE of 4200% at 360 nm and 6600% at 850 nm, associated with the specific detectivity of 3.9 × 1011 Jones at 360 nm and 9.7 × 1011 Jones at 850 nm.

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High‐Performance Broad‐Spectrum Photodetector by Suppressing Stray Electrons by Adopting a Hybrid CQD/Organic Architecture

Qiao,

Wang,

Wang

et al. 2024

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Broad‐spectrum photodetectors (PDs) are essential for various health monitoring, night vision, and telecommunications applications, but their detectivity in a wide absorbance region is limited by undesirable electronic response properties. Colloidal quantum dots (CQDs) are a promising system for broad‐spectrum detection, whereas their practical potential is hindered by suboptimal dark current characteristics. To overcome these challenges, we propose a layered architecture comprising CQDs and a bulk heterojunction (BHJ) organic film as a hole transport layer. The integration of PbS CQDs offers multiple benefits, including bandgap tuning for minimizing thermal carriers, surface passivation to reduce recombination rates, and the formation of high‐quality interfaces with organic layers, which collectively contribute to suppressing dark current leakage and thermal excitations by suppressing stray electrons. By integrating ITIC into the BHJ film, the device detectability is significantly enhanced, reaching 1013 Jones in the 400–1000 nm spectral range. This improvement is attributed to the higher lowest unoccupied molecular orbital (LUMO) of ITIC molecules, which effectively hinders electron injection. Additionally, J‐aggregation‐induced molecular stacking and optimized phase separation of BHJ films contribute to the enhanced performance. The integration of diverse materials offers greater flexibility in device design and functionality, enabling the development of more advanced and sophisticated optoelectronic devices. Furthermore, this approach could significantly enhance the theoretical and practical understanding of optoelectronic device engineering, leading to the development of more advanced optoelectronic devices.

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Green-Solvent-Processed High-Performance Broadband Organic Photodetectors

Cited by 11 publications

References 56 publications

Customizable Organic Charge-Transfer Cocrystals for the Dual-Mode Optoelectronics in the NIR (II) Window

Customizable Organic Charge-Transfer Cocrystals for the Dual-Mode Optoelectronics in the NIR (II) Window

Adopting Buffer Layer for Improving Signal‐to‐Noise Ratio of Broadband Photomultiplication Type Organic Photodetectors

High‐Performance Broad‐Spectrum Photodetector by Suppressing Stray Electrons by Adopting a Hybrid CQD/Organic Architecture

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