Grid-patterned trench insulated gate bipolar transistor for 1.2 kV hybrid/plug-in hybrid electric vehicle silicon power devices

Abstract

This paper reports on the newly developed silicon insulated gate bipolar transistor (IGBT) for TOYOTA’s 5th generation power devices. The designed IGBTs with a grid-patterned trench provide lower on-state voltage (VON) maintaining a wide mesa width. A successful 15% reduction of VON, which approaches the limit of silicon material, was accomplished by enhancement of the two-dimensional hole storage effect. Furthermore, the grid-patterned trench IGBT merged with a Schottky and Multi-layered Anode (SMA) technology demonstrated to improving significantly in trade-off curve in a reverse conducting IGBT (RC-IGBT) without lifetime control process. As a result, the grid-patterned trench IGBT has contributed to reduce power loss and volume in the new power control units (PCUs).