Group index and group velocity dispersion in silicon-on-insulator photonic wires

Dulkeith, E.; Xia, Fengnian; Schares, Laurent; Green, William M. J.; Vlasov, Yurii A.

doi:10.1364/oe.14.003853

Cited by 280 publications

(143 citation statements)

References 22 publications

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“…However, in a waveguiding system, e.g., in fiber-based ultrafast optics, the dispersion-control toolkit is smaller, and engineering waveguide dispersion becomes critical. In particular, when waveguides are built on a silicon platform with a much higher index contrast than optical fibers, dispersion in a highly nonlinear waveguide [187][188][189][190] often shows strong wavelength dependence, which is not preferable for wideband nonlinear applications. In [187,190], the ZDW in silicon rib and strip waveguides is mapped by scanning waveguide dimensions.…”

Section: Devicesmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Section: Devicesmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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“…Photonic crystal waveguide (PCW) application with slow light properties have been widely discussed [16][17][18][19][20][21][22][23][24][25][26] in the recent years. Slow light becomes possible to control the speed of light and can be applied to a great variety of applications, such as delay lines that control the arrival of optical signals and optical buffers.…”

Section: Time-division-multiplexer (Tdm) System Design Modelingmentioning

confidence: 99%

New Design of All-Optical Slow Light TDM Structure Based on Photonic Crystals

Wu¹

2014

PIER

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Abstract-This work demonstrates an all-optical slow light Time Division Multiplexing (TDM) structure based on photonic crystals (PCs). The structure shows good ability of dividing time domain signal into repetition time slots signal by four tunable group velocity waveguides from 0.006 * c to 0.248 * c where c is the velocity of light in the vacuum at the center wavelength of 1550 nm and over a bandwidth 4.52 THz with group velocity dispersion below 10 2 ps 2 /km. New high efficiency Y-type directional coupling output can get larger than ∼1.4 times intensity and ∼93% loss improvement which are comparable to conventional output device. The proposed PCs waveguide structure is leading the way to achieve the TDM application and has good capability to extend the application of the optical communication and optical fiber sensors systems.

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“…Measured extinction ratios of the MZI-interference spectra were about 20 dB and 25 dB for TE and TM modes, respectively. Since the relative phase-difference between a peak and its adjacent minimum valley was equal to π, the group-index profile of the a-Si:H waveguide can be determined from the interference fringe according to the theoretical relationship between the group index and the interference fringe [16,17]:…”

Section: Group Index Measurement and Chromatic Dispersion Determinationmentioning

confidence: 99%

Evaluation of Chromatic-Dispersion-Dependent Four-Wave-Mixing Efficiency in Hydrogenated Amorphous Silicon Waveguides

Kim¹,

Jeong²,

Jeon³

et al. 2013

Journal of the Optical Society of Korea

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We present an experimental and numerical study of spectral profiles of effective group indices of hydrogenated amorphous silicon (a-Si:H) waveguides and of their chromatic-dispersion effect on the four-wave-mixing (FWM) signal generation. The a-Si:H waveguides of 220-nm thickness and three different widths of 400, 450 and 500 nm were fabricated by using the conventional CMOS device processes on a 2-μm thick SiO2 bottom layer deposited on 8-inch Si wafers. Mach-Zehnder interferometers (MZIs) were formed with the a-Si:H waveguides, and used for precise measurement of the effective group indices and thus for determination of the spectral profile of the waveguides' chromatic dispersion. The wavelength ranges for the FWM-signal generation were about 45, 75 and 55 nm for the 400-, 450-and 500-nm-wide waveguides, respectively, at the pump wavelength of 1532 nm. A widest wavelength range for the efficient FWM process was observed with the 450-nm-wide waveguide having a zero-dispersion near the pump wavelength.

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Group index and group velocity dispersion in silicon-on-insulator photonic wires

Cited by 280 publications

References 22 publications

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

New Design of All-Optical Slow Light TDM Structure Based on Photonic Crystals

Evaluation of Chromatic-Dispersion-Dependent Four-Wave-Mixing Efficiency in Hydrogenated Amorphous Silicon Waveguides

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