Group-IV GeSn Nanophotonics

Attiaoui, Anis; Assali, Simone; Luo, Lu; Daligou, Gérard; Atala, Mahmoud; Koelling, Sebastien; Moutanabbir, Oussama

doi:10.1109/sum53465.2022.9858265

Cited by 3 publications

(5 citation statements)

References 2 publications

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“…Therefore, a strain-relaxed Ge buffer layer (Ge virtual substrate (VS)) needs to be deposited on the Si substrate as a template for GeSn epitaxy. GeSn NWs are typically grown using the top-down approach in three phase [59][60][61][62][63][64][65]. In the first step, a strain-free Ge buffer layer and GeSn layer are deposited on Si substrate by either CVD mechanism or MBE mechanism, and the Sn content in the GeSn layer determines the Sn content in the GeSn NWs prepared by the top-down method, and thickness of the Ge-VS layer and GeSn layer almost determine the minimum length of out-of-plane vertical GeSn NWs.…”

Section: 'Top-down' Approachmentioning

confidence: 99%

“…Currently, the application of out-of-plane GeSn NWs is still in the phase of basic research and technology development. However, the literature indicates that out-of-plane GeSn NWs have many potential applications, especially as infrared photodetectors [55,62,91,159,162,[166][167][168], high-efficiency Li-ion battery anodes [122], nanowire SWIR lasers [152,169,170], nanowire transistors (figure 8) [55,60,61,[171][172][173][174][175].…”

Section: Potential Applications Of Out-of-plane Gesn Nwsmentioning

confidence: 99%

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Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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As silicon integrated circuits become more and more integrated, traditional electrical interconnections have been their technological limitations, and GeSn materials have attracted a lot of interest due to their potential transition to direct bandgap as well as their compatibility with Si-based technology in recent years. GeSn materials, including GeSn films, GeSn alloys, and GeSn nanowires, are adjustable, scalable, and compatible with silicon. GeSn nanowires, as one-dimensional nanomaterials, including out-of-plane GeSn nanowires and in-plane GeSn nanowires, have different properties from those of bulk materials due to their distinctive structures. However, the former is rarely reported. In this article, we present the preparation of out-of-plane GeSn nanowires using top-down (etching and lithography) and bottom-up (VLS growth mechanism in the vapor-phase method and SFLS, SLS, and SVG growth mechanisms in the liquid-phase method) methods. We also provide a brief description of the applications of out-of-plane GeSn nanowires with various Sn contents and morphologies.

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Section: 'Top-down' Approachmentioning

confidence: 99%

Section: Potential Applications Of Out-of-plane Gesn Nwsmentioning

confidence: 99%

Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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“…Based on these metrics, our ultrathin metasurface is on par with traditional nanohole arrays [57] and outperforms some recently reported SWIR metasurfaces. [36,58] The plasmonic metasurface could therefore discriminate refractive index changes in its local environment in a highly sensitive fashion, especially as a freestanding film with both sides being exposed to the same targeted liquid/medium.…”

Section: Chiral Metasurface For Refractive Index Sensingmentioning

confidence: 99%

Ultrathin Twisted Stacked Gap‐Plasmon Metasurface with Giant and Tunable Shortwave Infrared Chirality

Han

Wang

Sun

et al. 2023

Advanced Optical Materials

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Ultrathin optical components with giant circular dichroism hold great promise for polarization‐sensitive nanophotonics. However, existing chiral metamaterials often rely on complex‐shaped nanoinclusions, and there remains a paucity of designs active in the shortwave infrared (SWIR) useful for telecommunication and night vision. Here a detailed numerical analysis of the chiroptical response of a simple twisted stacked variant of gap‐plasmon metasurface is presented based on periodic nanohole arrays. Impressively, the 100‐nm free‐standing plasmonic metasurface can attain a thickness‐normalized ellipticity of up to 74.2° µm−1 with tunable bands in the SWIR. Strong and robust optical activity is achieved through energy confinement by gap surface plasmons and effective inter‐nanohole coupling, resulting in an intense superchiral near field. The ultrathin plasmonic metasurface serves as an excellent platform for refractive index sensing with a sensitivity Sn of up to 648.1 nm RIU−1 and field‐enhanced enantiodiscrimination. The simple metasurface with strong SWIR chirality can enjoy a multitude of potential applications including polarization‐sensitive photodetection, optical telecommunication, machine vision, medical imaging, and spectroscopy. These findings also offer insights into some fundamental design principles for twisted stacked aperture‐based metasurfaces and should facilitate the development of new chiral metamaterials with exceptional performance.

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“…[15][16][17] Besides, these nanoscale materials also provide additional degrees of freedom to engineer and control light-matter interaction and the related absorption and detection. [18][19][20][21][22] Ge 1 − x Sn x NWs reported in recent studies were synthesized using various methods including the vapor-liquidsolid (VLS), [23][24][25][26] in-plane solution-liquid-solid (IPSLS), [27,28] microwave-assisted solution-liquid-solid growth, [29,30] and topdown etching. [21,31] However, these methods typically yield NWs with either low Sn content (below 10 at%) or irregular shapes thus limiting their potential for MWIR device development.…”

Section: Introductionmentioning

confidence: 99%

“…[ 15–17 ] Besides, these nanoscale materials also provide additional degrees of freedom to engineer and control light‐matter interaction and the related absorption and detection. [ 18–22 ]…”

Section: Introductionmentioning

confidence: 99%

Mid‐Infrared Top‐Gated Ge_0.82Sn_0.18 Nanowire Phototransistors

Luo,

Atalla,

Assali

et al. 2024

Advanced Optical Materials

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Achieving high crystalline quality germanium‐tin (Ge1 − xSnx) semiconductors at Sn content exceeding 10% is quintessential to implement the long sought‐after silicon‐compatible mid‐infrared photonics. Herein, by using sub‐20 nm Ge nanowires as compliant growth substrates, Ge1 − xSnx alloys with a Sn content of 18% exhibiting a high composition uniformity and crystallinity along a few micrometers in the nanowire axial direction are demonstrated. The measured bandgap energy of the Ge/Ge0.82Sn0.18 core/shell nanowires is 0.322 eV enabling the mid‐infrared photodetection with a cutoff wavelength of 3.9 µm. These narrow bandgap nanowires are also integrated into top‐gated field‐effect transistors and phototransistors. Depending on the gate design, these transistors are found to exhibit either ambipolar or unipolar behavior with a subthreshold swing as low as 228 mV/decade at 85 K. Moreover, varying the top gate voltage from ‐1 to 5 V yields nearly one order of magnitude increase in the photocurrent of the nanowire phototransistor under a 2330 nm illumination. This study shows that the core/shell nanowire architecture with a very thin core not only mitigates the challenges associated with strain build‐up observed in thin films but also provides a promising platform for all‐group IV mid‐infrared photonics and nanoelectronics paving the way toward sensing and imaging applications.

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Group-IV GeSn Nanophotonics

Cited by 3 publications

References 2 publications

Research progress of out-of-plane GeSn nanowires

Research progress of out-of-plane GeSn nanowires

Ultrathin Twisted Stacked Gap‐Plasmon Metasurface with Giant and Tunable Shortwave Infrared Chirality

Mid‐Infrared Top‐Gated Ge_0.82Sn_0.18 Nanowire Phototransistors

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Group-IV GeSn Nanophotonics

Cited by 3 publications

References 2 publications

Research progress of out-of-plane GeSn nanowires

Research progress of out-of-plane GeSn nanowires

Ultrathin Twisted Stacked Gap‐Plasmon Metasurface with Giant and Tunable Shortwave Infrared Chirality

Mid‐Infrared Top‐Gated Ge0.82Sn0.18 Nanowire Phototransistors

Contact Info

Product

Resources

About

Mid‐Infrared Top‐Gated Ge_0.82Sn_0.18 Nanowire Phototransistors