ST-SCs due to proper band gap and stability. [4] However, the low PCE of FAPbBr 3 solar cells (SCs) seriously hinders their applications. Thus, many efforts have been made to improve the PCE of FAPbBr 3 SCs by additive engineering, [5] interface engineering, [6] and crystallization regulation. [7] For example, Ko et al. added cesium bromide to regulate lattice interactions of FAPbBr 3 with preferred orientation and obtained 8.56% of a PCE due to the highquality crystalline film. [8] Zhang et al. introduced guanidinium bromide to modulate the crystallization process, achieving a PCE of 8.92% with an open-circuit voltage (Voc) of 1.639 V for FAPbBr 3 SCs. [9] Liu et al. constructed 2D/3D perovskite interface by phenethylammonium bromide, which significantly passivated the interface defects and improved the PCE from 7.7% to 9.4%. [10] Although the PCE of FAPbBr 3 SCs has been improved, it is still unclear and rarely investigated on the effect of δ phase (δ-FAPbBr 3 ) on film and device properties. The photoinactive δ-FAPbBr 3 has a large band gap and chain structure, which may affect light absorption and carrier transport. [11] Therefore, the research on δ-FAPbBr 3 is of great significance for FAPbBr 3 SCs performance improvement.In this work, the key factors on the crystallization of δ-FAPbBr 3 and the effect of δ-FAPbBr 3 on device performance were systematically studied for the first time. The hydrophobic poly[bis(4phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) underlayer induces random growth of δ-FAPbBr 3 and its aggregation at the bottom of the perovskite films, which bring more defects and hinder carrier transport. Contrarily, δ-FAPbBr 3 has more regular crystallization and uniform distribution on the hydrophilic (2-(9H-carbazol-9-yl) ethyl) phosphonic acid (2PACz) underlayer, which has less defect states and better carrier transport. By virtue of the management of δ-FAPbBr 3 and the passivation of the upper interface with a phosphonate/phosphine oxide dyad molecule (PE-TPPO), a PCE of 9.12% was obtained, which is the highest efficiency among the inverted FAPbBr 3 SCs. A ST-SC reached a LUE of 3.15% with a PCE of 7.44% and an AVT of 42.31%.