2022
DOI: 10.1039/d1nr07669h
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Growth and analysis of the tetragonal (ST12) germanium nanowires

Abstract: New semiconducting materials, such as state-of-the-art alloys, engineered composites and allotropes of well-established materials can demonstrate unique physical properties and generate wide possibilities for a vast range of applications. Here...

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Cited by 4 publications
(2 citation statements)
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“…In a recent work, metastable st12-Ge nanowires were synthesized via the solvothermal method using supercritical toluene and diphenylgermane as solvent and Ge precursor, respectively, at mild temperatures (290−330 °C) and a pressure of ∼48 bar. 233 The authors proposed that the Ge−C bond formed at the surface of the Ge nanowires could induce strain in the Ge lattice, which changed the bond length and angle of Ge−Ge to produce a tetragonal symmetry. In addition, the carbonaceous matrix produced the surface stress to drive phase transformation in a certain crystal direction.…”
Section: Templated Synthesismentioning
confidence: 99%
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“…In a recent work, metastable st12-Ge nanowires were synthesized via the solvothermal method using supercritical toluene and diphenylgermane as solvent and Ge precursor, respectively, at mild temperatures (290−330 °C) and a pressure of ∼48 bar. 233 The authors proposed that the Ge−C bond formed at the surface of the Ge nanowires could induce strain in the Ge lattice, which changed the bond length and angle of Ge−Ge to produce a tetragonal symmetry. In addition, the carbonaceous matrix produced the surface stress to drive phase transformation in a certain crystal direction.…”
Section: Templated Synthesismentioning
confidence: 99%
“…In brief, amorphous Ge nanoparticles were obtained with a lower 1-dodecene concentration (40% of the total reaction volume), while crystalline nanoparticles were prepared at a higher concentration of 1-dodecene. In a recent work, metastable st12-Ge nanowires were synthesized via the solvothermal method using supercritical toluene and diphenyl­germane as solvent and Ge precursor, respectively, at mild temperatures (290–330 °C) and a pressure of ∼48 bar . The authors proposed that the Ge–C bond formed at the surface of the Ge nanowires could induce strain in the Ge lattice, which changed the bond length and angle of Ge–Ge to produce a tetragonal symmetry.…”
Section: Phase Engineering In Elemental Semimetal and Nonmetal Nanoma...mentioning
confidence: 99%