2008
DOI: 10.1088/0953-2048/21/12/122001
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Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

Abstract: LaFeAsO 1-x F x thin films were deposited successfully on (001)-oriented LaAlO 3 and MgO substrates from stoichiometric LaFeAsO 1-x F x polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and post annealing of the films yield nearly phase pure films with a pronounced c-axis texture and a strong biaxial in-plane orientation.Transport measurements show metallic resistance and onset of superconductivity at 11 K. µ 0 H c2 (T) was determined by resistive measureme… Show more

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Cited by 89 publications
(95 citation statements)
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“…The successful growth of high quality ReFeAsO 1−x F x thin films [8][9][10][11] enables the investigation of fundamental properties. Details of the preparation of LaFeAsO 1−x F x films are described in Ref.…”
Section: Methodsmentioning
confidence: 99%
“…The successful growth of high quality ReFeAsO 1−x F x thin films [8][9][10][11] enables the investigation of fundamental properties. Details of the preparation of LaFeAsO 1−x F x films are described in Ref.…”
Section: Methodsmentioning
confidence: 99%
“…12 The SrFe 2 As 2 :Co epitaxial films showed a superconducting transition at 20 K with a small magnetic field anisotropy. 13 After that, thin film growth of LaFeAsO 14 and Fe(Se, Te) [15][16][17][18][19] have been reported by other groups.…”
Section: Footnotesmentioning
confidence: 96%
“…Yet, the synthesis results are often mixed and seem highly dependent on specific chemistry and composition. For example, in the LaOFeAs system, epitaxial thin films were obtained but superconducting properties were poor [10][11][12]. On the other hand, in the case of the BaFe 2 As 2 system, it was reportedly easy to grow and cleave single crystal samples as well as to deposit high quality thin-films [12,13].…”
Section: Introductionmentioning
confidence: 99%