Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Aldous, James D.; Burrows, Christopher W.; Maskery, Ian; Brewer, Matthew S.; Pickup, David M.; Walker, Marc; Mudd, James J.; Hase, Thomas P. A.; Duffy, J. A.; Wilkins, S. B.; Sánchez-Hanke, Cecilia; Bell, Gavin R.

doi:10.1016/j.jcrysgro.2012.07.010

Cited by 14 publications

(10 citation statements)

References 34 publications

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“…This asymmetry is also captured in the RSM where the MnSb(0002) peak appears as a feature around Q z = 2.2 Å –1 clearly elongated in the higher Q z direction compared to the Si and Ge peaks. It is interesting to note that NiSb-GaAs films also exhibit high Q z shoulders 31 despite the much-reduced lattice mismatch, but more detailed experiments are needed to determine whether this is a surface feature or occurs at the substrate. A Williamson-Hall analysis was performed for the MnSb reflections which yields a grain size of (89 ± 2) nm, comparable to the nominal film thickness and indicating high crystalline order throughout the MnSb film.…”

Section: Resultsmentioning

confidence: 99%

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Burrows

Dobbie

Myronov

et al. 2013

Crystal Growth & Design

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Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

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Section: Resultsmentioning

confidence: 99%

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Burrows

Dobbie

Myronov

et al. 2013

Crystal Growth & Design

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“…Small crystallites of this alternative epitaxial orientation can appear in MnSb¯lms on GaAs and have also been observed for low-strain NiSb¯lms on GaAs (111). 22 However, the key point is the presence of c-MnSb on both GaAs and In 0:5 Ga 0:5 As substrates.…”

Section: G R Bell Et Almentioning

confidence: 99%

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Bell

Burrows

Hase

et al. 2014

SPIN

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The cubic polymorph of the binary transition metal pnictide (TMP) MnSb, c-MnSb, has been predicted to be a robust half-metallic ferromagnetic (HMF) material with minority spin gap & 1 eV. Here, MnSb epilayers are grown by molecular beam epitaxy (MBE) on GaAs and In 0:5 Ga 0:5 As(111) substrates and analyzed using synchrotron radiation X-ray di®raction. We¯nd polymorphic growth of MnSb on both substrates, where c-MnSb co-exists with the ordinary niccolite n-MnSb polymorph. The grain size of the c-MnSb is of the order of tens of nanometer on both substrates and its appearance during MBE growth is independent of the very di®erent epitaxial strain from the GaAs (3.1%) and In 0:5 Ga 0:5 As (0.31%) substrates.

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“…However, for the XAS spectra collected from regions of the joint between Ni and MoS 2 , a small peak turns out at the photon energy of 861 eV. The unexpected peak is attributed to signals from Ni atoms bonded with S but subjected to confined spaces, and also observed in the XAS from nickel chalcogenide nanofilms . Furthermore, this peak is more pronounced once collected from Region 1 where a larger nodule locates between the semiconductor and metal sites.…”

Section: Resultsmentioning

confidence: 87%

Metallic Contact between MoS₂ and Ni via Au Nanoglue

Shi

Posysaev

Huttula

et al. 2018

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A critical factor for electronics based on inorganic layered crystals stems from the electrical contact mode between the semiconducting crystals and the metal counterparts in the electric circuit. Here, a materials tailoring strategy via nanocomposite decoration is carried out to reach metallic contact between MoS matrix and transition metal nanoparticles. Nickel nanoparticles (NiNPs) are successfully joined to the sides of a layered MoS crystal through gold nanobuffers, forming semiconducting and magnetic NiNPs@MoS complexes. The intrinsic semiconducting property of MoS remains unchanged, and it can be lowered to only few layers. Chemical bonding of the Ni to the MoS host is verified by synchrotron radiation based photoemission electron microscopy, and further proved by first-principles calculations. Following the system's band alignment, new electron migration channels between metal and the semiconducting side contribute to the metallic contact mechanism, while semiconductor-metal heterojunctions enhance the photocatalytic ability.

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Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Cited by 14 publications

References 34 publications

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Metallic Contact between MoS₂ and Ni via Au Nanoglue

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Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films

Cited by 14 publications

References 34 publications

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates

EPITAXIAL GROWTH OF CUBIC MnSb ON GaAs AND InGaAs(111)

Metallic Contact between MoS2 and Ni via Au Nanoglue

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Metallic Contact between MoS₂ and Ni via Au Nanoglue