Growth and characteristics of near-stoichiometric Zn:LiNbO3 crystals grown by TSSG method

Fang, Shuangquan; Wang, Biao; Zhang, Tao; Ling, Furi; Zhao, Yunqiang

doi:10.1016/j.matchemphys.2004.06.030

Cited by 6 publications

(5 citation statements)

References 12 publications

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“…It has generally been accepted that the 3484 cm −1 (2.87 μm) absorption band is intimately associated with the 0–1 stretching vibrational band of OH − molecular defects in LiNbO 3 . Furthermore, when the concentration of optical damage resistance impurities is above from a certain value then the IR absorption band shifts to larger energies (to shorter wavelengths) . In order to identify which samples analyzed in this work present an IR band shift, optical density data around the OH − optical absorption were measured.…”

Section: Resultsmentioning

confidence: 99%

Modification of band gap in lithium niobate caused by indium incorporation

Castillo-Torres

2013

Physica Status Solidi (b)

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Phone: þ52 01 953 5320214, ext: 290, Fax: þ52 01 953 5320399Measurements on transition energies near the optical absorption band edge for lithium niobate samples doped with indium at several concentrations are presented. Indirect and direct optical absorption processes were analyzed. It was found that the energies for these transitions are larger than those corresponding to undoped lithium niobate, suggesting that the energy band structure was modified by the presence of indium. For an indium concentration between 0 and 4 mol%, a value of energy of 3.8 eV was measured for indirect transition, and a range of 3.9-4.0 eV was determined for direct transition energy; whereas 3.6 and 3.8 eV were obtained, respectively, for the corresponding values of pure lithium niobate. In addition, Urbach and phonon energies were also calculated for the same indium-doped lithium niobate samples which values are lesser than those obtained for pure lithium niobate. Both behaviors remain unaltered regardless of whether the indium concentration is above or below the optical damage threshold value. Substitution of only lithium vacancies and antisite defects by indium atoms for any concentration of doping may explain the results.

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Section: Resultsmentioning

confidence: 99%

Modification of band gap in lithium niobate caused by indium incorporation

Castillo-Torres

2013

Physica Status Solidi (b)

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“…Periodically poled sLN:Mg (PPLN), in particular, received special attention in quasi-phase-matched frequency conversion devices. 15 Investigations on the critical threshold concentration of ODR ions in HTTSS grown near stoichiometric crystals have been reported for Mg, Zn, In, and Zr ions using alkali fluxed systems, [43][44][45][46] and for Sc using a Li-rich solution; 47 further references and discussion on this topic will be given in Section III C. …”

Section: Growth Of Odr-ion Doped Sln Crystalsmentioning

confidence: 99%

“…As it was shown above for Mg, the higher the Li 2 O content in the crystal, the lower the threshold concentration in crystals doped with other ODR ions. 44,45,47 In addition, the increase in the valence of the dopant decreases the threshold. [94][95][96][97][98] In general, the incorporation of ODR ions reduces the amount of antisite Nb Li in the lattice.…”

Section: Other Divalent Trivalent and Tetravalent Odr Dopantsmentioning

confidence: 99%

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Growth, defect structure, and THz application of stoichiometric lithium niobate

Lengyel

Péter

Kovács

et al. 2015

Applied Physics Reviews

106

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Owing to the extraordinary richness of its physical properties, congruent lithium niobate has attracted multidecade-long interest both for fundamental science and applications. The combination of ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as the strong photorefractive and photovoltaic effects offers a great potential for applications in modern optics. To provide powerful optical components in high energy laser applications, tailoring of key material parameters, especially stoichiometry, is required. This paper reviews the state of the art of growing large stoichiometric LiNbO 3 (sLN) crystals, in particular, the defect engineering of pure and doped sLN with emphasis on optical damage resistant (ODR) dopants (e.g., Mg, Zn, In, Sc, Hf, Zr, Sn). The discussion is focused on crystals grown by the high temperature top seeded solution growth (HTTSSG) technique using alkali oxide fluxing agents. Based on high-temperature phase equilibria studies of the Li 2 O-Nb 2 O 5 -X 2 O ternary systems (X ¼ Na, K, Rb, Cs), the impact of alkali homologue additives on the stoichiometry of the lithium niobate phase will be analyzed, together with a summary of the ultraviolet, infrared, and far-infrared absorption spectroscopic methods developed to characterize the composition of the crystals. It will be shown that using HTTSSG from K 2 O containing flux, crystals closest to the stoichiometric composition can be grown characterized by a UV-edge position of at about 302 nm and a single narrow hydroxyl band in the IR with a linewidth of less than 3 cm À1 at 300 K. The threshold concentrations for ODR dopants depend on crystal stoichiometry and the valence of the dopants; Raman spectra, hydroxyl vibration spectra, and Z-scan measurements prove to be useful to distinguish crystals below and above the photorefractive threshold. Crystals just above the threshold are preferred for most nonlinear optical applications apart holography and have the additional advantage to minimize the absorption even in the far-infrared (THz) range. The review also provides a discussion on the progress made in the characterization of non-stoichiometry related intrinsic and extrinsic defect structures in doped LN crystals, with emphasis on ODR-ion-doped and/or closely stoichiometric systems, based on both spectroscopic measurements and theoretical modelling, including the results of first principles quantum mechanical calculations on hydroxyl defects. It will also be shown that new perspective applications, e.g., the generation of high energy THz pulses with energies on the tens-of-mJ scale, are feasible with ODR-doped sLN crystals if optimal conditions, including the contact grating technique, are applied. V C 2015 AIP Publishing LLC.

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“…It had reached so-called "threshold" concentration when doping 6 mol% Mg 2+ into LiNbO 3 , which had been accepted by many researchers [9,10]. The Mg 2+ ions beyond the "threshold" will occupy the normal Li and Nb simultaneously, thus forming Mg Li + -Mg Nb 3− charge self-compensating structure similar to the case existed LiNbO 3 crystal doped with Zn ions [11], which will make forbidden band widen, therefore the electrons transition energy from valence band to conduction band increased and the absorption edge shifted to shortwave direction.…”

Section: Resultsmentioning

confidence: 96%