Growth and characterization of bimetallic (Ni,Co) sulfide thin films deposited by spray pyrolysis

Gahtar, Abdelouahab; Zaouche, C.; Ammari, Abdelkader; Dahbi, L.

doi:10.15251/cl.2023.205.377

Cited by 3 publications

(1 citation statement)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 shows the variation of voltage with cur-01022-5 rent, it also represents the electrical resistivity variation of nickel sulfide thin films, the voltage changed linearly with the increase of current in the range of 0 -100 mA, The voltage value increases with the decrease in the sulfur concentration in the {30% 12) and we have summarized the results as shown in Fig. 12, which shows the thickness variation, resistivity and electrical conductivity of the nickel sulfide thin films from the above, we can see that [31].…”

Section: Electrical Propertiesmentioning

confidence: 86%

Synthesis of High Electrical Conductivity of Superconductor NiS Thin Films

Sbaihi,

Benramache,

Benbrika

2024

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

In this work, we prepared and studied the physical properties of nickel sulfide (NiS) nanostructure thin films, which were deposited on heated glasses substrates (T  250°C) using the spray pyrolysis technique (SPT)using different Precursor concentrations of these two solution sources: nickel nitrates hyxahydratewith fixing the other remaining experimental conditions, and this is to understand more the role of the Precursor concentrations of the solutions on the physical properties of nickel sulfide thin films. The results of X-ray diffraction (DRX) analysis showed that all nickel sulfide (NiS) thin films samples are polycrystalline in a hexagonal phase and have a preferred orientation of ( 010). The Crystallite size (D) was estimated by The Debye-Scherrer's relation, ranging from 9.915 nm to 22.148 nm. The emergence of the Ni-S bond corresponding to the frequency 668.563 cm -1 was confirmed by FTIR analysis. On the other hand, the energy of the band gaps varies for samples from 0.87, 0.88 to 0.92 eV. Finally, the Sheet resistance (Rsh) was measured using the four-point method, which it used to determine the conductivity of the samples.

show abstract

Section: Electrical Propertiesmentioning

confidence: 86%

Synthesis of High Electrical Conductivity of Superconductor NiS Thin Films

Sbaihi,

Benramache,

Benbrika

2024

J. Nano- Electron. Phys.

View full text Add to dashboard Cite

show abstract

Investigating the physicochemical characteristics of monovalent metal-doped nickel oxide thin films

Maghni,

Zaouche,

Dahbi

et al. 2024

DJNB

View full text Add to dashboard Cite

The effect of Ag doping on the optical, structural, and electrical properties of deposited Ni1-xAgxO thin films deposited on glass substrates by spray pyrolysis has been studied. This work aims to investigate the optical and physical characteristics variations of Ni1- xAgxO thin films fabricated into semiconductors with varying doping levels x. The values of 0 at.%, 2 at.%, 4 at.%, 6 at.%, and 8 at.% are these levels. The transmission spectra demonstrate the good optical transparency of the Ni1-xAgxO thin films in the visible range of 70% to 85%. The thin films of Ni1-xAgxO exhibited optical gap energies ranging from 3.63 to 3.71eV. Between 329 and 430meV was the range of the Urbach energy. Nonetheless, numerous flaws with the highest Urbach energy are observed in Ni0.92Ag0.08O thin films. The lowest optical gap energy is found in Ni0.92Ag0.08O thin sheets. A maximum of 0.024(Ω.cm)-1 electrical conductivity was observed in the Ni0.92Ag0.08O thin films. Our films have an average electrical conductivity of approximately 0.0176(Ω.cm)-1 . The Ni1- xAgxO thin film XRD patterns show that the films have a cubic structure and are polycrystalline.

show abstract

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

Gahtar,

Zaouche,

Maouane

et al. 2024

Annals of West University of Timisoara - Physics

View full text Add to dashboard Cite

Thin films of cobalt sulfide were grown on glass substrates at four different temperatures (250 °C, 300 °C, 350 °C and 400 °C) using spray-pyrolysis technique. The precursor solutions were prepared using cobalt chloride and thiourea. The effect of deposition temperature on the structural, morphological, and optical properties of cobalt sulfide thin films was investigated using different experimental techniques such as X-ray diffraction (XRD), and UV-visible spectrophotometry, Fourier Transform Infrared Spectroscopy (FT-IR) and four-probe method. The XRD analysis showed that crystallite size varies from 9.76 to 14.11 nm with increasing the deposition temperature. UV-visible data analysis shows a decrease in the band gap energies with increasing temperature (1.82 eV for 250 °C, 1.76 eV for 300 °C, 1.72 eV for 350 °C, and 1.65 eV for 400 °C). The analysis of the chemical composition by FTIR confirmed the presence of Co, S elements. On the other hand, the electrical conductivity of the cobalt sulfide thin films increased owing to the increase in the crystallite size and reduction of defects density.

show abstract

Growth and characterization of bimetallic (Ni,Co) sulfide thin films deposited by spray pyrolysis

Cited by 3 publications

References 34 publications

Synthesis of High Electrical Conductivity of Superconductor NiS Thin Films

Synthesis of High Electrical Conductivity of Superconductor NiS Thin Films

Investigating the physicochemical characteristics of monovalent metal-doped nickel oxide thin films

Substrate Temperature Effect on the Structural, Optical and Morphological Proprties of Cobalt Sulfide Thin Films Deposited Using Spray Pyrolisis

Contact Info

Product

Resources

About