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Growth and Characterization of Boron-Doped Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> Layers Grown by Reduced Pressure Chemical Vapor Deposition
Abstract: In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.
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