Growth and characterization of bulk GaN single crystals by basic ammonothermal method

Abstract

Bulk GaN crystals were grown by the basic ammonothermal method. The c-plane GaN templates grown by hydride vapor phase epitaxy were used as seed crystals and sodium metal, amide, and azide were added as a mineralizer. The growth conditions are at temperatures from 500~600 o C and pressures from 2~3 kbar. The growth rate for the c-axis was increased with increasing the operating pressure. Average dislocation density was measured 1 × 10