Growth and characterization of C60/GaAs interfaces and C60 doped GaAs

Nishinaga, Jiro; Horíkoshi, Yoshiji

doi:10.1016/j.jcrysgro.2010.11.068

Cited by 7 publications

(4 citation statements)

References 23 publications

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“…Clear phase contrast patterns are confirmed on the C 60 d-doped GaAs layers, suggesting that the layers have good crystalline quality. 10 Figure 1 shows the XRD rocking curves of C 60 uniformly doped GaAs and Si doped GaAs layers using the 004 symmetric reflection. In the Si doped GaAs layer, a shoulder is observed in the higher diffraction angle side because of the shorter ionic radius of Si in the GaAs lattice.…”

Section: Resultsmentioning

confidence: 99%

“…Capacitance-voltage (C-V) characteristics indicate that C 60 molecules inside GaAs and AlGaAs lattices produce electron traps which can be charged or discharged by an applied electrical field. 10,12 In the present work, in order to investigate the electron traps induced by incorporation of C 60 more precisely, we fabricate thick C 60 uniformly doped GaAs and C 60 , Si codoped GaAs layers by the MEE method. The crystalline properties are investigated by x-ray diffraction (XRD) and Raman scattering measurements and the electrical characteristics are measured by four-point probe methods and Hall-effect measurements under illumination.…”

Section: Introductionmentioning

confidence: 99%

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Electrical properties of C60 and Si codoped GaAs layers

Nishinaga

Horíkoshi

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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C60 uniformly doped GaAs and C60, Si codoped GaAs layers are grown by a migration enhanced epitaxy method. C60 doped GaAs layers show a single and sharp diffraction peak in x-ray diffraction and only an LO phonon peak is confirmed, indicating that the crystalline quality is fairly good. All of the C60 doped GaAs layers have highly resistive characteristics, and C60, Si codoped GaAs layers show n-type conductivity only when the Si concentration is of the same order or greater than the total carbon concentrations. At low temperatures the conductivity of the C60, Si codoped GaAs layers increases with exposure to light whose energy is below the GaAs bandgap energy. The electron concentrations and mobilities of the layers are confirmed to be increased under illumination by wavelengths between 900 and 1100 nm. These results imply that the electron transitions from the valence band to the trap levels and from the trap levels to the conduction band occur simultaneously as if the traps act as intralevels. As a result, the carrier concentrations are enhanced in the same way they would be if the excitation was above the GaAs bandgap energy.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical properties of C60 and Si codoped GaAs layers

Nishinaga

Horíkoshi

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Indeed, vacancies in GaAs filled with C 60 , acting as quantum dots, have been synthesized by molecular beam epitaxy experiment. 21) Moreover, in a recent experiment, the single-electron tunneling through C 60 in a metal-insulator-semiconductor structure has been observed. 22) However, it is still uncertain whether the electronic structure of hybrids of vacancies and nanomaterials is the simple sum of those of negative and positive constituent units or not.…”

Section: Introductionmentioning

confidence: 97%

“…Indeed, vacancies in GaAs filled by C 60 have been synthesized by the molecular beam epitaxy experiment acting as quantum dots. 21) Moreover, a recent experiment has reported the single-electron tunneling through C 60 in a metal-insulator-semiconductor structure. 22) However, it is still uncertain whether the electronic properties of the hybrids of vacan-…”

Section: Introductionmentioning

confidence: 99%

Energetics and electronic structure of tubular Si vacancies filled with carbon nanotubes

Kochi¹,

Okada²

2016

Jpn. J. Appl. Phys.

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We studied the energetics and electronic structure of Si nanoscale vacancies incorporating a carbon nanotube (CNT), using first-principles total-energy calculations based on the density functional theory. Our calculations show that the incorporated CNT in the Si nano-tunnel acts as an atom-thickness liner providing the electrostatically flat nanoscale space inside the CNT by shielding the dangling bond states of tubular Si vacancies. The incorporation of CNT into the tubular Si vacancies is exothermic with the energy gain up to 7.4 eV/nm depending on the diameter of the vacancy and encapsulated CNT. The electronic states of the vacancy substantially hybridize with those of the CNT, leading to complex electronic energy band near the Fermi level.

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C60 monolayer on semiconductors

Cepek¹,

Goldoni²

2018

Physics of Solid Surfaces

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Growth and characterization of C60/GaAs interfaces and C60 doped GaAs

Cited by 7 publications

References 23 publications

Electrical properties of C60 and Si codoped GaAs layers

Electrical properties of C60 and Si codoped GaAs layers

Energetics and electronic structure of tubular Si vacancies filled with carbon nanotubes

C60 monolayer on semiconductors

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