Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates

Chen, Guan Ting; Chang, Shih-sen; Chyi, Jen Inn; Chang, Moo Been

doi:10.1063/1.2946655

Cited by 20 publications

(15 citation statements)

References 21 publications

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“…6 For GaN grown on Si(001) substrate, an approach has been utilized to reduce the defect density by opening V-grooved trenches with thin SiO 2 masks, and then selectively overgrowing the GaN layers in trenches. 2,7,8 Whereas transmission electron microscopy (TEM) analyses have revealed the suppression of dislocation density, many dislocations with a density of larger than 10 8 cm 22 remain at the GaN surface, especially above the masked regions. In this study, an improved design of the shallow trench on Si(001) substrate was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

et al. 2012

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The improved design of sub-micron trenches on Si(001) substrate was demonstrated for defect suppression in semi-polar selectively-grown GaN layers. Cathodoluminescence and transmission electron microscopy measurements revealed a dramatically decreased density of threading dislocations and stacking faults near the surface of the overgrown GaN layer when the trench width ranged from 500 to 1500 nm. It was observed that defects were effectively trapped inside the trench when the ratio of trench depth to the SiO 2 thickness is less than 0.66. In addition, a significant reduction of intrinsic polarization electric field was achieved for the InGaN/GaN multiple quantum well on the GaN selectively grown from the Si trenches.

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Section: Introductionmentioning

confidence: 99%

Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

et al. 2012

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“…1͒ have been grown on r-plane sapphire, 3 ͑100͒ ␥-LiAlO 2 , 1 a-and m-plane SiC, 4,5 and more recently on a-and m-plane GaN substrates. 6,7 Semipolar nitride films have been mostly grown by using lateral epitaxial overgrowth techniques 8 but also on m-plane sapphire, 9 Si͑001͒, 10 and semipolar GaN bulk substrates. 11,12 The structural characteristics of the nonpolar and semipolar nitride films are expected to be anisotropic as a result of the anisotropies of film and substrate surfaces.…”

Section: Introductionmentioning

confidence: 99%

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a-and m-plane surface orientations on r-plane sapphire and ͑100͒ ␥-LiAlO 2 , respectively, and semipolar ͑1011͒ InN grown on r-plane sapphire. The on-axis rocking curve ͑RC͒ widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN ͓0001͔ for the a-plane films, and maxima at InN ͓0001͔ for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN͑111͒A and InN͑111͒B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a-and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

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“…And the polarization-induced internal electric field (IEF) of InGaN/GaN MQWs on semipolar {1011} surface is much smaller than on c-plane with the same Indium composition in the QWs [7]. In this work, we report that high crystalline and efficiency green emission {1011} InGaN/GaN MQWs had been grown on the {1011} facets of GaN nanopyramid arrays by selective area epitaxy (SAE) technique.…”

Section: Introductionmentioning

confidence: 93%

Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays

Chang

Huang

et al. 2011

MRS Proc.

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We report that the high crystalline and high efficiency green emission semipolar {1011} InGaN/GaN multiple quantum wells (MQWs) grown on the {10 1 1} facets of GaN nanopyramid arrays by selective area epitaxy. Clear and sharp interfaces of the semipolar {1011} InGaN/GaN MQWs was observed by transmission electron microscopy images. As comparing with (0001) MQWs, the internal electric field of {10-11} MQWs was remarkably reduced from 1.7 MV/cm to 0.5 MV/cm, and the room temperature (RT) internal quantum efficiency (IQE) at green emission was enhanced by about 80%. This greatly enhancement of IQE is due to suppress the polarization effect in the {1011} MQWs which shorten the radiative recombination to compete with nonradiative recombination at RT. These results evince that the {1011} planes are promising for solving the efficiency green gap of III-nitride light emitters. IntroductionThe III-nitride materials have attracted much attention due to its tremendous potential for fabricating light emitting diodes (LEDs) with a full color application from UV (~3.4 eV) to

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Growth and characterization of crack-free semipolar {1-101}InGaN∕GaN multiple-quantum well on V-grooved (001)Si substrates

Cited by 20 publications

References 21 publications

Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Fabrication and Optical Properties of Green emission semipolar {101̅1} InGaN/GaN MQWs Selective Grown on GaN Nanopyramid Arrays

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