Growth and characterization of CuAlSe2(112)/GaAs(100) heteroepitaxial layers grown by hot wall epitaxy method

You, Sung Hyun; Hong, Kim Jae; Jeong, T. S.; Lee, S.Y.; Bang, Jinju; Moon, Jong-Dae; Kim, H.S.

doi:10.1016/j.jcrysgro.2005.11.127

Cited by 6 publications

(2 citation statements)

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“…CuAlSe 2 has been deposited in thin film form by techniques like metalorganic chemical vapour deposition, metalorganic vapour phase epitaxy, molecular beam epitaxy, hot wall epitaxy, vacuum evaporation, etc. [2][3][4][5][6]. In this work, the pulse electrodeposition technique has been successfully employed for the deposition of thin CuAlSe 2 films.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of pulse electrodeposited CuAlSe2 films

Thirumoorthy¹,

Ramesh²,

Murali

2015

J Mater Sci: Mater Electron

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CuAlSe 2 films were pulse electrodeposited on tin oxide coated glass substrates at different duty cycles for the first time. X-ray diffraction studies indicated single phase chalcopyrite CuAlSe 2 . Strain, crystallite size and dislocation density were evaluated from the X-ray diffraction data. The Cu/Al ratio approaches unity at higher duty cycles. Electrical transport properties of the films indicated that the resistivity of the films decreased with increase of duty cycle. Photoelectrochemical cells were fabricated with the films deposited at different duty cycles. Films deposited at 50 % duty cycle indicated high photo output. Capacitance voltage measurements were made and the nature of the plot indicated p-type behaviour.

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Section: Introductionmentioning

confidence: 99%

Characteristics of pulse electrodeposited CuAlSe2 films

Thirumoorthy¹,

Ramesh²,

Murali

2015

J Mater Sci: Mater Electron

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“…The CuAlSe 2 (1 1 2)/GaAs (1 0 0) heteroepitaxial layers were grown by the hot wall epitaxy (HWE) method. From the measurements of the Laue patterns and the double crystal X-ray diffraction, the CuAlSe 2 epilayer was confirmed to be the epitaxially grown layer along the 1 1 2 direction onto a GaAs (1 0 0) substrate [3]. Investigations on the CuIn 1−x Al x Se 2 (CIAS) system as a potential alternate to CIGS are quite important due to replacement of Ga by inexpensive and abundant Al.…”

Section: Introductionmentioning

confidence: 99%