Growth and characterization of cubic GaN grown on GaAs (110) substrate by MOVPE

Analysis and simulation of the in-situ time-resolved reflectivity recorded during the growth of GaN on GaAs (110) substrate

“…4 Previously, we studied the growth temperature (750°C to 900°C) effect on the structural and optical properties of GaN on a GaAs (110) substrate. 5 The results proved that GaN properties are very different in this growth temperature range. We found that GaN has a polycrystalline structure with a preferential alignment of cubic GaN according to a (220) orientation at 850°C.…”

“…Layer C shows the coexistence of two island size distributions, which can be associated with the presence of hexagonal inclusions in the thick cubic GaN layer. 5 Figure 2 shows the in-situ reflectivity signals recorded for the series of samples A-D as well as their corresponding fits using the above model.…”

“…6(a), which we associated with diffusion of the As element through the GaN layer. 5 Figure 7 shows CL spectra recorded at room temperature and for a beam energy of 20 keV in the GaN layers grown at 850°C and having a thickness varying from 0.15 to 1 μm.…”

“…The growth of GaN on GaAs (110) was performed under H 2 carrier gas with a 50 nm thick GaN buffer layer and without nitridation of GaAs (110). 5 These growth conditions are different from those used on (100), (113), ( 112) and (111) oriented GaAs substrates, 12,13 where N 2 was used as the carrier gas and the GaAs substrate underwent a nitridation step before the growth of the GaN nucleation layer. Unlike the case in Refs.…”

“…More details about the growth process and properties of GaN layers grown on GaAs (110) substrates have been reported elsewhere. 5 The GaN layers grown at temperatures of 750°C, 800°C, 850°C, and 900°C are noted A, B, C, and D, respectively. The growth process was in-situ monitored by He-Ne laser reflectometry under normal incidence light (λ ¼ 632.8 nm).…”