Growth and Characterization of Electroplated Copper Selenide Thin Films

Abstract

Copper Selenide thin films have been prepared on indium doped tin oxide coated conducting glass substrates from an aqueous electrolytic bath consists of CuSO4 and SeO2 using potentiostatic electrodeposition technique. Deposition mechanism has been analyzed using cyclic voltammetry. X-ray diffraction pattern showed that the prepared films possess polycrystalline nature with hexagonal structure. Film composition and surface morphology showed that films with smooth surface and better stoichiometry are obtained under optimized condition. Band gap value of the deposited films is determined using optical absorption measurements. Variation of film thickness with time and its dependency on structural, morphological, compositional and optical properties are investigated.

Studies on Electrodeposited NiS Thin Films

“…It is also observed from figures 3a and 3b that maximum value of crystallite size, minimum value of strain and dislocation density are noted for films with maximum thickness value around 950 nm which has been obtained at a deposition time and bath temperature around 30 minutes and 80ºC respectively. Similar functional dependency of microstructural parameters with deposition time for CuSe and PbS have been reported earlier [20,21].…”

Potential Pulse Atomic Layer Deposition of Cu2Se

“…This article concerns investigations into the electrodeposition of Cu 2 Se, a binary compound that could be used in the formation of CZTS. In addition, Cu 2 Se itself has potential applications as a photovoltaic window material, in optical fibers, Li ion cells, thermoelectric converters, photothermal conversion devices, and microwave shield coatings. − Cu 2 Se has been formed using numerous techniques, ,, including a hydrazine-based process, although it required high temperatures and toxic materials . Paraffin liquids have been used, but they contain contaminating organics and control in deposition is limited .…”

Modification of Nanocrystalline Porous Cu2-xSe Films during Argon Plasma Treatment

“…There are large sinuous pores between the clusters. This structure of the copper selenide films is common and occurs in various growth methods [17][18][19][20][21]. In the cross-sectional image (Figure 1c), two layers are clearly distinguishable by the film thicknesses.…”