Growth and Characterization of Fullerene/GaAs Interfaces and C 60 -Doped GaAs and AlGaAs Layers

Nishinaga, Jiro

doi:10.1016/b978-0-12-812136-8.00019-0

Cited by 2 publications

(2 citation statements)

References 41 publications

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“…As the active region has an effective smaller bandgap compared to the cladding layers and vice versa, its refractive index is slightly greater than that of the adjacent layers. The gallium arsenide effective refractive index at these wavelengths is larger when compared to the refractive index of the aluminum gallium arsenide cladding layers [11][12][13]37,38].…”

Section: Crystals Of Aluminum Gallium Arsenidementioning

confidence: 99%

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

2022

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Dental caries is a progressive disease with varying phases of demineralization and remineralization, and the scope of reversing the carious lesion is increased if it is diagnosed before there is surface cavitation. Preventive management strategies are directed towards making the enamel more resistant towards acid dissolution. The caries preventive protocol has always been fluoride-centric. Repeated application of fluoride gives rise to acquired fluoride resistance strains of Streptococci mutans which can be transient or permanent. The need of the hour is an effective remineralizing protocol which is one which brings about a change in enamel crystal and makes it more resistant to the acidic challenges of the oral cavity. The authors have devised a protocol in which irradiation with aluminum gallium arsenide crystals LASER can bring about a sanative change in crystal and lead to greater acid resistance of the enamel crystal and thus potentiate the remineralization of non-cavitated lesions. The concept of aluminum gallium arsenide–assisted caries inhibition and the proposed hypothesis of the mechanism of action is discussed.

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Section: Crystals Of Aluminum Gallium Arsenidementioning

confidence: 99%

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

2022

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“…However, the GaP, which causes a lattice mismatch (3.57 %) to (Al)GaAs, is no more useful for reflective (Al)GaAs based IR-LEDs owing to the use of the insulators for reflective structures [ 15 ]. A lattice mismatch between Al x Ga 1−x As (x = 0) and Al x Ga 1−x As(x = 1) is known as approximately under 0.5 % [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

Lee¹,

Shim

Park

et al. 2023

Micromachines

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The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved conductivity on the top layer of p-AlGaAs of the reflective IR-LEDs. In the wafer bond process required for fabricating the reflective IR-LED, the Al/Au alloy, which has filled the hole patterns in Si3N4 film, was used for improving the reflectivity of the Ag reflector and was bonded directly to the top layer of p-AlGaAs on the epitaxial wafer. Based on current-voltage measurements, it was found that the Al/Au alloyed material has a distinct ohmic characteristic pertaining to the p-AlGaAs layer compared with those of the Au/Be alloy material. Therefore, the Al/Au alloy may constitute one of the favored approaches for overcoming the insulative reflective structures of reflective IR-LEDs. For a current density of 200 mA, a lower forward voltage (1.56 V) was observed from the wafer bond IR-LED chip made with the Al/Au alloy; this voltage was remarkably lower in value than that of the conventional chip made with the Au/Be metal (2.29 V). A higher output power (182 mW) was observed from the reflective IR-LEDs made with the Al/Au alloy, thus displaying an increase of 64% compared with those made with the Au/Be alloy (111 mW).

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Growth and Characterization of Fullerene/GaAs Interfaces and C 60 -Doped GaAs and AlGaAs Layers

Cited by 2 publications

References 41 publications

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

Anticariogenic Sanative Effect of Aluminum Gallium Arsenide Crystals on Hydroxyapatite Crystals

Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

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