Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

Mia, Md Dalim; Samuels, Brian C; Borges, Pablo D.; Scolfaro, L. M. R.; Siddique, Anwar; Saha, Jibesh Kanti; Talukder, Abdul Ahad; Droopad, R.

doi:10.1007/s00339-022-05476-2

Appl. Phys. A

2022

DOI: 10.1007/s00339-022-05476-2

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Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

Md Dalim Mia

Brian C Samuels

Pablo D. Borges

et al.

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Cited by 4 publications

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Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Vijayakumar,

Ganesan,

Sarguna

et al. 2024

Appl. Phys. A

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Undoped and Cr doped β-Ga2O3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arc.sec for undoped β-Ga2O3 crystals whereas the 100 and 200 ppm of Cr doped β-Ga2O3 crystals display multiple rocking curves with large peak widths indicating the presence of structural defects. Raman measurements reveal broadening in the vibrational mode of ~ 350 cm− 1 with a shoulder peak indicating the Cr3+ dopants preferentially substitute for Ga3+ at the octahedral sites. Further, the Cr doped β-Ga2O3 crystals display strong optical absorption bands about 420 and 597 nm in the UV-Vis spectroscopy. Moreover, the observation of sharp characteristic photoluminescence emission lines at 690 and 697 nm also confirms the Cr substitution in the doped crystals. The indentation hardness increases nearly linear from 13.0 ± 0.6 to 17.9 ± 0.4 GPa whilst the indentation modulus decreases from 224.9 ± 21.4 to 202.4 ± 11.9 GPa upon Cr doping of 200 ppm in β-Ga2O3. The structural defects caused by the Cr doping interrupt the movement of indentation induced dislocations that results in the increase of hardness of the Cr doped β-Ga2O3 (100) single crystals.

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Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Vijayakumar,

Ganesan,

Sarguna

et al. 2024

Appl. Phys. A

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Hybrid density functional theory study of substitutional Gd in β-Ga2O3

Welch¹,

Borges²,

Scolfaro³

2023

Physica B: Condensed Matter

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Impact of Thermal Annealing on Properties of MgGa₂O₄ Thin Films in Oxygen Ambience

Hamid,

Brian,

Emu

et al. 2024

ACS Appl. Electron. Mater.

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In this study, pulsed laser-deposited magnesium gallate (MgGa 2 O 4 ) thin films on sapphire substrates were annealed at high temperatures in a continuous oxygen flow. The postgrowth thermally annealed MgGa 2 O 4 (MGO) films showed an increasing trend in the position shift of the diffraction peaks with temperatures suggesting an alloy or change in composition. The presence of aluminum (Al) in the photoemission survey spectra after the annealing process implies Al diffusion from the substrate. This also complemented the previous assumption of a compositional change in the MGO films, which possibly caused the position change in the diffraction peaks. Furthermore, the individual photoemission lines revealed oxidation states of +2, +3, and +3 for Mg, Ga, and Al, respectively, in the annealed MGO films. In addition, transmission electron micrographs exhibited the preferential orientation of magnesium gallate films with an individually uniform distribution of the compositional elements throughout the film layer. The annealed MGO films showed an increase in the bandgap with temperatures, which can be attributed to the incorporation of Al into the formation of an alloy. The complex refractive index has been estimated to be ∼1.863 at 632 nm for annealing at 700 °C, with a decreasing trend observed with temperature. The annealed samples' root-mean-square (RMS) roughness followed a decreasing trend with temperatures indicating an improved surface quality upon the postgrowth thermal treatment.

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Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

Cited by 4 publications

References 71 publications

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Hybrid density functional theory study of substitutional Gd in β-Ga2O3

Impact of Thermal Annealing on Properties of MgGa₂O₄ Thin Films in Oxygen Ambience

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Growth and characterization of (Ga1 − xGdx)2O3 by pulsed laser deposition for wide bandgap applications

Cited by 4 publications

References 71 publications

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Hybrid density functional theory study of substitutional Gd in β-Ga2O3

Impact of Thermal Annealing on Properties of MgGa2O4 Thin Films in Oxygen Ambience

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Product

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Impact of Thermal Annealing on Properties of MgGa₂O₄ Thin Films in Oxygen Ambience