Growth and characterization of GaDyN/GaN double barrierstructures

Sano, Mitsuo; Zhou, Yikai; Emura, S.; Hasegawa, Shigehiko; Asahi, H.

doi:10.1016/j.jcrysgro.2012.12.127

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…On the other hand, nitride-based DMSs have attracted considerable interest in spintronic materials because they show hysteresis loops in magnetization versus external magnetic field (M-H) curves even at RT. [16][17][18][19][20][21][22][23][24][25] Since GaN-based DMSs, such as GaCrN, 17) GaGdN, [18][19][20][21][22] and GaDyN, 23,24) show hysteresis loops in M-H curves even at RT, GaN-based DMSs are promising materials for fabricating spintronic devices. To fabricate spintronic devices, the creation of n-and p-type DMSs is required.…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic characterization of Sm-doped GaN grown by plasma-assisted molecular beam epitaxy

Dehara¹,

Miyazaki²,

Hasegawa³

2016

Jpn. J. Appl. Phys.

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We have investigated structural, optical and magnetic properties of Sm-doped GaN thin films grown by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and X-ray diffraction reveal that Ga1− x Sm x N films with a SmN mole fraction of ∼8% or below are grown on GaN templates without segregation of any secondary phases. With increasing SmN mole fraction, the c-axis lattice parameter of the GaSmN films linearly increases. GaSmN films with low Sm concentrations exhibit inner-4f transitions of Sm3+ in photoluminescence spectra. The present findings show that Sm atoms are substituted for some Ga atoms as trivalent ions (Sm3+). The Ga1− x Sm x N films display hysteresis loops in magnetization versus external magnetic field (M–H) curves even at 300 K. We will discuss the origin of these features together with the corresponding temperature dependences of magnetization.

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Section: Introductionmentioning

confidence: 99%

Structural and magnetic characterization of Sm-doped GaN grown by plasma-assisted molecular beam epitaxy

Dehara¹,

Miyazaki²,

Hasegawa³

2016

Jpn. J. Appl. Phys.

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“…On the other hand, many groups have already reported ferromagnetism in various transition and rare earth metal doped AIII nitride layers [6][7][8][9][10][11]. Ferromagnetic ordering above room temperature was obs erved for GaN layers doped with Mn [12,13], Cr [14,15], Fe [16] and lanthanide atoms, like Gd [17,18] and Dy [19][20][21]. Both MOVPE and MBE techniques were used for the growth of these layers.…”

Section: Introductionmentioning

confidence: 99%