Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes

Chapman, David C.; Vineis, C.J.; Oakley, D.C.; Napoleone, A.; Smith, Gary M.; Duerr, E.K.; Jensen, K.E.; Donnelly, J.P.; McIntosh, K. A.; Verghese, S.

doi:10.1016/j.jcrysgro.2007.11.043

Cited by 2 publications

(1 citation statement)

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“…Especially for the SWIR band, APDs have several potential applications, including optical communication, quantum information, range-finding, coherent sensing, medical diagnostics, analytical apparatus, vehicle light detection and ranging (LIDAR), life science, etc. ( Figure 1 ) [ 7 , 8 , 9 , 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

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Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

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