2019
DOI: 10.1016/j.tsf.2019.05.029
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Growth and characterization of gallium oxide films grown with nitrogen by plasma-assisted molecular-beam epitaxy

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Cited by 23 publications
(11 citation statements)
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“…The dissociation of the N 2 anion in the 2D Ga 2 O 3 film considerably altered its energy bandgap. The origin of the decreased bandgap is attributed to the N acceptor states [30][31][32] in the bandgap of Ga 2 O 3 . Therefore, N 2 -doped Ga 2 O 3 is considered a valuable candidate for tunable optoelectronic applications and can also affect the charge transfer mechanism at hetero-interfaces.…”
Section: Thin Film Characterizationmentioning
confidence: 98%
“…The dissociation of the N 2 anion in the 2D Ga 2 O 3 film considerably altered its energy bandgap. The origin of the decreased bandgap is attributed to the N acceptor states [30][31][32] in the bandgap of Ga 2 O 3 . Therefore, N 2 -doped Ga 2 O 3 is considered a valuable candidate for tunable optoelectronic applications and can also affect the charge transfer mechanism at hetero-interfaces.…”
Section: Thin Film Characterizationmentioning
confidence: 98%
“…This implies that the introduction of ionic nitrogen into Ga 2 O 3 considerably altered its band structure. The origin of the decreased bandgap was attributed to the N acceptor states in the bandgap of Ga 2 O 3 [ 16 – 18 ]. The other evidences about bandgap alteration of nitrogen-doped ultra-thin Ga 2 O 3 film are discussed in the next section.…”
Section: Resultsmentioning
confidence: 99%
“…The origin of the decreased bandgap was attributed to the N acceptor states in the bandgap of Ga 2 O 3 [16][17][18]. The other evidences about bandgap alteration of nitrogen-doped ultrathin Ga 2 O 3 film are discussed in the next section.…”
Section: Structural Propertiesmentioning
confidence: 95%
“…It was noticed that the KA100 samples comprising of A-R phases have an energy bandgap between 3.06 and 3.03 eV. Keeping in mind that the bandgap of a semiconductor can be influenced by several factors such as doping, synthetic parameters, lattice mismatch [ 46 ], crystallite size [ 47 ], annealing/calcination temperature [ 48 ], and phase composition, and also based on the recent reports that inform “the bandgap determination through extrapolation of Tauc segment to the hv (X) axis is not appropriate for samples containing more than one prominent optical absorbing center/or phase” [ 49 , 50 ], the bandgap was also determined the by extrapolation of the linear part of the dependence to the baseline ( Figure 2 ). The optical band as determined by the Tauc plot and baseline extrapolation method is referred to as BG-T and BG-BE, respectively.…”
Section: Resultsmentioning
confidence: 99%