Zinc Oxide Materials for Electronic and Optoelectronic Device Applications 2011
DOI: 10.1002/9781119991038.ch9
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Growth and Characterization of GaN/ZnO Heteroepitaxy and ZnO‐Based Hybrid Devices

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“…Also, it has a higher exciton binding energy of 60 meV than other wide bandgap semiconductor materials. As a result, it has been extensively viable for a wide range of applications in semiconductor device technology, such as photovoltaics, gas and bio-sensors, transistors, lasers, and other cutting-edge optoelectronic devices [3][4][5]. However, ZnO is prone to non-radiative recombination defects, which limit its effectiveness and performance as an optoelectronic device [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…Also, it has a higher exciton binding energy of 60 meV than other wide bandgap semiconductor materials. As a result, it has been extensively viable for a wide range of applications in semiconductor device technology, such as photovoltaics, gas and bio-sensors, transistors, lasers, and other cutting-edge optoelectronic devices [3][4][5]. However, ZnO is prone to non-radiative recombination defects, which limit its effectiveness and performance as an optoelectronic device [6,7].…”
Section: Introductionmentioning
confidence: 99%