Growth and characterization of GePb/Ge multiple quantum wells

Liu, Xiangquan; Zheng, Jun; Huang, Qinxing; Pang, Yaqing; Zhang, Diandian; Zhu, Y. C.; Li, Zhi; Zuo, Yong; Cheng, Buwen

doi:10.1016/j.jallcom.2022.167954

Cited by 3 publications

(4 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is the Pb segregation, which is caused by the extremely low solid solubility of Pb in Ge. The small size of Pb segregation is thanks to the surface reconstruction of MQW [13]. As shown in figure 2(a), for sample #1 grown at 250 • C, the root mean square (RMS) roughness is only 0.77 nm.…”

Section: Resultsmentioning

confidence: 98%

“…Then, the unstrained lattice constant (a 0 ) is estimated by Poisson's relationship and the average Pb composition of GePb/Ge MQW is obtained by solving the Vegard's law [22]. Finally, the Pb composition in GePb layer is calculated by multiplying the thickness ratio factor of 3.5, that is, (t GePb + t Ge )/t GePb , where t GePb and t Ge are the thicknesses of GePb and Ge layers, respectively [13,23]. For sample #1 grown at 250 • C, the Pb composition of GePb layer is 3.5%, while for sample #4 grown at 400 • C, the Pb composition is reduced to 1.8%.…”

Section: Resultsmentioning

confidence: 99%

“…been used for the fabrication of GePb alloys, such as metalinduced crystallization [8], laser-induced crystallization [9][10][11], sputtering epitaxy [12,13] and rapid melting growth [14]. Compared with other methods, sputtering epitaxy is a low-cost and efficient growth technology that can grow high-quality wafer-scale GePb alloys.…”

Section: Introductionmentioning

confidence: 99%

“…This makes the epitaxy of high quality GePb alloys very difficult [8,15]. Previous studies have shown that the multiple quantum well (MQW) structure not only has a positive significance for improving the radiation recombination efficiency [16,17], but also can effectively inhibit Pb segregation [13]. The surface of GePb/Ge MQW with high Pb composition is flat and has only tiny Pb points.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

Liu,

Zheng,

Huang

et al. 2024

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

To reveal the growth behavior of GePb/Ge multiple quantum well (MQW) samples, both the influence of growth temperature and H2/Ar atmosphere are investigated by sputtering epitaxy. As the growth temperature increases from 250 to 400 ºC, Pb atoms become more active and migrate easily to the surface, forming Pb clusters. As a result, the Pb composition in the GePb/Ge MQW is decreased from 3.5% to 1.8%. When H2 is introduced into the chamber, it is found that the MQW disappears and GePb film with uniform Pb distribution is formed. This is possibly because that the introduction of H2 can retain Pb atoms and the GePb is still grown even if the Pb flux is off. The results show that low temperature and H2 atmosphere are effective methods to further break the low solid solubility limit of Pb in Ge.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

Liu,

Zheng,

Huang

et al. 2024

J. Phys. D: Appl. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

High-quality germanium-lead nanosheets grown directly on silicon substrate by lead-catalyzed method

Liu,

Huang,

Zheng

et al. 2025

Applied Surface Science

View full text Add to dashboard Cite

Molecular beam epitaxy growth and characterization of GePb alloys

McCarthy,

McMinn,

Liu

et al. 2024

Journal of Vacuum Science &Amp; Technology B

View full text Add to dashboard Cite

Pb based group-IV alloys such as GePb have been gaining interest as a potential alternative for infrared detectors, quantum materials, and high-speed electronic devices. Challenges remain in their growth due to the extremely low solid solubility of Pb in the Ge–Pb system. This paper reports molecular beam epitaxy growth of GePb alloy thin films on Ge(100) substrates. Effusion cells of Ge and Pb are used to control the flux ratio independently. The optimal substrate temperature is found to be near the thermocouple temperature of 300 °C based on the characterization of the grown films using high-resolution x-ray diffraction. A large change in the Ge:Pb beam equivalent pressure ratio from 10:1 to 1:1 results in only a minimal increase of the Pb composition from 0.74% to 2.84% as estimated from Raman spectroscopy and Rutherford backscattering spectrometry. Scanning electron microscopy images show a large volume of Pb islands on the surface that form into either long trapezoidal rods or uniform droplets, with increasing Pb flux and growth time the density of Pb islands increased.

show abstract

Growth and characterization of GePb/Ge multiple quantum wells

Cited by 3 publications

References 26 publications

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

High-quality germanium-lead nanosheets grown directly on silicon substrate by lead-catalyzed method

Molecular beam epitaxy growth and characterization of GePb alloys

Contact Info

Product

Resources

About

Growth and characterization of GePb/Ge multiple quantum wells

Cited by 3 publications

References 26 publications

Investigation of temperature and H2 on GePb/Ge multiple quantum well growth

Investigation of temperature and H2 on GePb/Ge multiple quantum well growth

High-quality germanium-lead nanosheets grown directly on silicon substrate by lead-catalyzed method

Molecular beam epitaxy growth and characterization of GePb alloys

Contact Info

Product

Resources

About

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth

Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth