Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route

Li, He; Kang, Honglan; Yong, Zheng; Xu, Zhi‐Kang

doi:10.1016/j.electacta.2008.08.006

Cited by 12 publications

(8 citation statements)

References 29 publications

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“…Peaks appear at ∼45° and ∼53.3° corresponding to the (220) and (311) planes of CuBr, respectively. The observed peaks are in good agreement with a previous report on CuBr thin films . There was no indication of the generation of noticeable structural deformities in the zincblende CuBr upon exposure to oxygen plasma up to periods of 5 min.…”

Section: Resultssupporting

confidence: 91%

“…The observed peaks are in good agreement with a previous report on CuBr thin films. 14 There was no indication of the generation of noticeable structural deformities in the zincblende CuBr upon exposure to oxygen plasma up to periods of 5 min. However, a slight variation in the full width at half-maximum (fwhm) of the (111) peak is observed with the plasma exposure of the films.…”

Section: Resultsmentioning

confidence: 94%

“…CuBr is a I–VII compound semiconductor material with great potential for short-wavelength applications due to its extremely large excitonic binding energy (∼108 meV) and direct band gap (∼3.1 eV at 300 K). − It exhibits good transparency (>80%) throughout the major portion of the visible region (above 420 nm) and shows strong absorption in the UV-violet region of the spectrum . Although, there are numerous reports on the excitonic and nonlinear optical properties of CuBr, − there are relatively few studies on the semiconducting properties of this material. − The poor hole conductivity of as-deposited (ASD) CuBr films represents a major limitation for the adoption of these materials, and thus the deposition of good quality CuBr films with increased p-type conductivity would be an extremely important development for future applications of this material system.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Vijayaraghavan¹,

McCoy²,

Chauhan³

et al. 2014

J. Phys. Chem. C

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p-type transparent conducting CuBr thin films were grown by thermal evaporation of CuBr followed by oxygen plasma treatment. Efficient incorporation of oxygen into the CuBr films was revealed, and the influence of plasma exposure on the electrical, structural, optical, and electronic properties of CuBr films was investigated. Xray diffraction (XRD) analysis indicated the Zincblende structure of the oxygen plasma treated CuBr (OCB) films with the formation of nanocrystalline grains preferentially oriented along the (111) direction. p-type conducting OCB films show >85% average transmittance along with hole concentration, conductivity and Hall mobility values of ∼10 19 cm −3 , ∼1.5 S cm −1 and ∼0.45 cm 2 V −1 s −1 , respectively. The X-ray photoelectron spectra of the OCB films demonstrated that the plasma exposure resulted in a significant increase in the O 1s signal at the surface of OCB films. On the basis of the experimental results from the Hall measurements and X-ray photoemission, a possible explanation comprising the formation of a surface CuO layer is also proposed to elucidate the increase in the p-type conductivity of the OCB films. Strong room temperature emission of OCB films at around 416 nm was also observed, the intensity of which decreased with the increase of oxygen plasma exposure time. The results present oxygen plasma exposure as a simple and promising technique for the production of CuBr-based p-type materials for future transparent electronics.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Vijayaraghavan¹,

McCoy²,

Chauhan³

et al. 2014

J. Phys. Chem. C

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“…The presence of well defined Bragg peaks reveal the polycrystalline nature of the films and the 2θ values of these peaks are in excellent agreement with those of the ICDD powder diffraction database. The peaks centred at 2θ ~ 27.1º, ~ 45º and ~ 53.3º correspond to the (111), (220) and (311) reflections, respectively, which are characteristic of γ-CuBr in the zincblende configuration [9,10]. Further to this, the (111) plane appears to be the prefered orientation irrespective of the underlying substrates.…”

Section: Methodsmentioning

confidence: 83%

CuBr blue light emitting electroluminescent thin film devices

Lucas

Cowley

Daniels

et al. 2011

Phys. Status Solidi C

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Visible blue cathodoluminescence (CL), photoluminescence (PL), x‐ray excited optical luminescence (XEOL) and electroluminescence (EL) via Zf free excitonic emission have been obtained from CuBr thin films deposited on glass, Cr coated glass, GaAs and Si substrates. In addition to the Zf emission several peaks corresponding to Cu+ emissions via 3d94s ↔ d10 transitions were observed on the AC EL spectrum at 2.10, 2.7, 3.03, 3.07 and 3.80 eV. X‐ray diffraction (XRD) measurements confirmed that the vacuum evaporated CuBr thin films grow preferentially with a (111) orientation irrespective of the substrate. While the AC voltage source was found to have no detrimental effects on CuBr thin films, cathodic deposition of Cu metal via electrolytic decomposition was observed under steady state DC voltage stresses. The results from the various luminescence experiments suggest that CuBr thin films may be used as a phosphor layer in blue emitting AC thin film electroluminescent devices (ACTFELD) (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…It exhibits good transparency (>80%) throughout the major portion of the visible region (above 420 nm) and shows strong absorption in the UV-violet region of the spectrum [6]. There are numerous reports on the huge potential of this material for excitonic and non-linear optical applications [6][7][8]. However, there are relatively few reports on the 2 semiconducting properties of CuBr [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell

et al. 2013

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Growth and characterization of highly oriented CuBr thin films through room temperature electrochemical route

Cited by 12 publications

References 29 publications

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

CuBr blue light emitting electroluminescent thin film devices

Deposition of earth-abundant p-type CuBr films with high hole conductivity and realization of p-CuBr/n-Si heterojunction solar cell

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