Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

Abstract

A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature.

Electronic properties of two-dimensional zinc oxide in hexagonal, (4,4)-tetragonal, and (4,8)-tetragonal structures by using Hybrid Functional calculation

“…Nevertheless, the (4,4)-tetragonal structure has a direct band gap of 5.00 eV and indirect band gap of 3.06 eV. Note that, only the band gap of the hexagonal monolayer is availably measured and has been reported recently at 4.48 eV [12], whereas other 2D structures have not been synthesized yet. These varieties of wide band-gap 2D ZnO then have potentials to be implemented in nanoscale UV optoelectronic via nano-structural engineering.…”

Low-Temperature Growth of Zinc Oxide Films from Zinc Acetate Solution Using Plasma-Assisted Mist Chemical Vapor Deposition

“…The crystallization enhancement of ZnO films at low temperature with decreasing the distance from antenna to substrate is considered to be caused by enhancement of oxidation due to enough supply of oxygen radicals from the plasmas during deposition [13].…”

Effect of Heat Treatment Method on Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

“…) and oxygen vacancy ion (V O 2+ ) in the annealing and thin film processes due to the big difference of ionic radius between Zn ion and O ion, and the ions from such defects take on the role of donor ion within the crystals and display n-type conductivity [4]. The production of ZnO thin film that has minimal stress and superior stoichiometry is essential for the development and application of ZnO type LED and LD.…”